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參數(shù)資料
| 型號： | HGTG5N120BND_NL |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | IGBT 晶體管 |
| 英文描述： | 21A, 1200V, NPT Series N-Channel IGBTs with Anti-Parallel Hyperfast Diodes |
| 中文描述： | 21 A, 1200 V, N-CHANNEL IGBT, TO-247 |
| 封裝： | TO-247, 3 PIN |
| 文件頁數(shù)： | 4/8頁 |
| 文件大?。?/td> | 216K |
| 代理商： | HGTG5N120BND_NL |
2003 Fairchild Semiconductor Corporation
HGTG5N120BND, HGTP5N120BND, Rev. B1
FIGURE 3. OPERATING FREQUENCY vs COLLECTOR TO
EMITTER CURRENT
FIGURE 4. SHORT CIRCUIT WITHSTAND TIME
FIGURE 5. COLLECTOR TO EMITTER ON-STATE VOLTAGE
FIGURE 6. COLLECTOR TO EMITTER ON-STATE VOLTAGE
FIGURE 7. TURN-ON ENERGY LOSS vs COLLECTOR TO
EMITTER CURRENT
FIGURE 8. TURN-OFF ENERGY LOSS vs COLLECTOR TO
EMITTER CURRENT
Typical Performance Curves Unless Otherwise Specified (Continued)
4
ICE, COLLECTOR TO EMITTER CURRENT (A)
10
8
50
6
100
2
200
TC VGE
75oC 12V
75oC 15V
TJ = 150
oC, R
G = 25, L = 5mH, VCE = 960V
TC
VGE
12V
15V
110oC
fMAX1 = 0.05 / (td(OFF)I + td(ON)I)
RJC = 0.75
oC/W, SEE NOTES
PC = CONDUCTION DISSIPATION
(DUTY FACTOR = 50%)
fMAX2 = (PD - PC) / (EON + EOFF)
TC = 75
oC, V
GE = 15V
IDEAL DIODE
f MAX
,OPERA
T
IN
G
F
R
EQ
UENCY
(
k
Hz)
VGE, GATE TO EMITTER VOLTAGE (V)
I SC
,PEAK
SHO
R
T
CIR
CUIT
CURRENT
(
A
)
t SC
,SHO
R
T
CIR
CUIT
WIT
H
ST
AND
T
IM
E
(
s)
11
12
13
14
15
10
20
30
40
20
30
40
50
70
tSC
ISC
60
10
15
25
35
80
VCE = 840V, RG = 25, TJ = 125
oC
TC = -55
oC
024
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
I CE
,CO
L
ECT
O
R
T
O
EM
IT
T
E
R
CURRENT
(
A
)
0
5
10
15
68
10
30
25
20
PULSE DURATION = 250
s
DUTY CYCLE <0.5%, VGE = 12V
TC = 25
oC
TC = 150
oC
I CE
,CO
L
ECT
O
R
T
O
EM
IT
T
E
R
CURRENT
(
A
)
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
10
15
20
02
46
8
10
5
25
0
30
TC = -55
oC
TC = 25
oC
TC = 150
oC
DUTY CYCLE <0.5%, VGE = 15V
PULSE DURATION = 250
s
E
ON
,T
URN-
ON
ENERGY
L
O
SS
(
J)
2500
1500
ICE, COLLECTOR TO EMITTER CURRENT (A)
1000
500
5
37
6
4
2
3000
89
10
2000
0
RG = 25, L = 5mH, VCE = 960V
TJ = 150
oC, V
GE = 12V, VGE = 15V
TJ = 25
oC, V
GE = 12V, VGE = 15V
ICE, COLLECTOR TO EMITTER CURRENT (A)
E
OF
F
,T
U
RN
-O
F
E
N
E
R
GY
L
O
S
(
J)
6
4
35
7
2
300
200
400
500
9
8
600
700
800
900
10
TJ = 25
oC, V
GE = 12V OR 15V
TJ = 150
oC, V
GE = 12V OR 15V
RG = 25, L = 5mH, VCE = 960V
HGTG5N120BND, HGTP5N120BND
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相關(guān)代理商/技術(shù)參數(shù) |
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| HGTG5N120CND | 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:25A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode |
| HGTG7N60A4 | 功能描述:IGBT 晶體管 600V N-Channel IGBT SMPS Series RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| HGTG7N60A4D | 功能描述:IGBT 晶體管 600V N-Ch IGBT SMPS Series HF RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| HGTG7N60A4D | 制造商:Fairchild Semiconductor Corporation 功能描述:IGBT N TO-247 |
| HGTG7N60A4D_05 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode |
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