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參數(shù)資料
| 型號： | HGTG5N120BND_NL |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | IGBT 晶體管 |
| 英文描述： | 21A, 1200V, NPT Series N-Channel IGBTs with Anti-Parallel Hyperfast Diodes |
| 中文描述： | 21 A, 1200 V, N-CHANNEL IGBT, TO-247 |
| 封裝： | TO-247, 3 PIN |
| 文件頁數(shù)： | 2/8頁 |
| 文件大?。?/td> | 216K |
| 代理商： | HGTG5N120BND_NL |
2003 Fairchild Semiconductor Corporation
HGTG5N120BND, HGTP5N120BND, Rev. B1
Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified
HGTG5N120BND
HGTP5N120BND
UNITS
Collector to Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .BVCES
1200
V
Collector Current Continuous
At TC = 25
oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
C25
21
A
At TC = 110
oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
C110
10
A
Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ICM
40
A
Gate to Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGES
±20
V
Gate to Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VGEM
±30
V
Switching Safe Operating Area at TJ = 150
oC (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . SSOA
30A at 1200V
Power Dissipation Total at TC = 25
oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
D
167
W
Power Dissipation Derating TC > 25
oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
1.33
W/oC
Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG
-55 to 150
oC
Maximum Lead Temperature for Soldering
Leads at 0.063in (1.6mm) from case for 10s . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL
300
oC
Package Body for 10s, see Tech Brief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .Tpkg
260
oC
Short Circuit Withstand Time (Note 2) at VGE = 15V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .tSC
8
s
Short Circuit Withstand Time (Note 2) at VGE = 12V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .tSC
15
s
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTES:
1. Pulse width limited by maximum junction temperature.
2. VCE(PK) = 840V, TJ = 125
oC, R
G = 25.
Electrical Specifications
TC = 25
oC, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Collector to Emitter Breakdown Voltage
BVCES
IC = 250A, VGE = 0V
1200
-
V
Collector to Emitter Leakage Current
ICES
VCE = 1200V
TC = 25
oC
-
250
A
TC = 125
oC
-
100
-
A
TC = 150
oC-
-
1.5
mA
Collector to Emitter Saturation Voltage
VCE(SAT)
IC = 5A,
VGE = 15V
TC = 25
oC
-
2.45
2.7
V
TC = 150
oC-
3.7
4.2
V
Gate to Emitter Threshold Voltage
VGE(TH)
IC = 45A, VCE = VGE
6.0
6.8
-
V
Gate to Emitter Leakage Current
IGES
VGE = ±20V
-
±250
nA
Switching SOA
SSOA
TJ = 150
oC, R
G = 25, VGE = 15V,
L = 5mH, VCE(PK) = 1200V
30
-
A
Gate to Emitter Plateau Voltage
VGEP
IC = 5A, VCE = 600V
-
10.5
-
V
On-State Gate Charge
QG(ON)
IC = 5A,
VCE = 600V
VGE = 15V
-
53
65
nC
VGE = 20V
-
60
72
nC
Current Turn-On Delay Time
td(ON)I
IGBT and Diode at TJ = 25
oC,
ICE = 5A,
VCE = 960V,
VGE = 15V,
RG = 25,
L = 5mH,
Test Circuit (Figure 20)
-22
25
ns
Current Rise Time
trI
-15
20
ns
Current Turn-Off Delay Time
td(OFF)I
-
160
180
ns
Current Fall Time
tfI
-
130
160
ns
Turn-On Energy
EON
-
450
600
J
Turn-Off Energy (Note 3)
EOFF
-
390
450
J
HGTG5N120BND, HGTP5N120BND
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