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參數(shù)資料
| 型號(hào)： | HGTG5N120BND_NL |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | IGBT 晶體管 |
| 英文描述： | 21A, 1200V, NPT Series N-Channel IGBTs with Anti-Parallel Hyperfast Diodes |
| 中文描述： | 21 A, 1200 V, N-CHANNEL IGBT, TO-247 |
| 封裝： | TO-247, 3 PIN |
| 文件頁(yè)數(shù)： | 3/8頁(yè) |
| 文件大?。?/td> | 216K |
| 代理商： | HGTG5N120BND_NL |
2003 Fairchild Semiconductor Corporation
HGTG5N120BND, HGTP5N120BND, Rev. B1
Current Turn-On Delay Time
td(ON)I
IGBT and Diode at TJ = 150
oC,
ICE = 5A,
VCE = 960V,
VGE = 15V,
RG = 25,
L = 5mH,
Test Circuit (Figure 20)
-20
25
ns
Current Rise Time
trI
-15
20
ns
Current Turn-Off Delay Time
td(OFF)I
-
182
280
ns
Current Fall Time
tfI
-
175
200
ns
Turn-On Energy
EON
-
1000
1300
J
Turn-Off Energy (Note 3)
EOFF
-
560
800
J
Diode Forward Voltage
VEC
IEC = 10A
-
2.70
3.50
V
Diode Reverse Recovery Time
trr
IEC = 7A, dlEC/dt = 200A/s
-
50
65
ns
IEC = 1A, dlEC/dt = 200A/s
-
30
40
ns
Thermal Resistance Junction To Case
RθJC
IGBT
-
0.75
oC/W
Diode
-
1.75
oC/W
NOTE:
3. Turn-Off Energy Loss (EOFF) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and
ending at the point where the collector current equals zero (ICE = 0A). All devices were tested per JEDEC Standard No. 24-1 Method for
Measurement of Power Device Turn-Off Switching Loss. This test method produces the true total Turn-Off Energy Loss.
Electrical Specifications
TC = 25
oC, Unless Otherwise Specified (Continued)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Typical Performance Curves Unless Otherwise Specified
FIGURE 1. DC COLLECTOR CURRENT vs CASE
TEMPERATURE
FIGURE 2. MINIMUM SWITCHING SAFE OPERATING AREA
TC, CASE TEMPERATURE (
oC)
I CE
,DC
COL
L
E
CT
OR
CURRENT
(
A
)
50
0
25
75
100
125
150
5
10
15
25
20
VGE = 15V
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
1400
0
I CE
,C
O
L
ECT
O
R
T
O
EM
IT
T
E
R
CURRENT
(
A
)
600
800
400
200
1000
1200
0
TJ = 150
oC, R
G = 25, VGE = 15V, L = 5mH
5
10
15
20
25
30
35
HGTG5N120BND, HGTP5N120BND
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HGTG5N120CND | 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:25A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode |
| HGTG7N60A4 | 功能描述:IGBT 晶體管 600V N-Channel IGBT SMPS Series RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| HGTG7N60A4D | 功能描述:IGBT 晶體管 600V N-Ch IGBT SMPS Series HF RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| HGTG7N60A4D | 制造商:Fairchild Semiconductor Corporation 功能描述:IGBT N TO-247 |
| HGTG7N60A4D_05 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode |
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