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參數(shù)資料
| 型號： | HGTG40N6 |
| 廠商： | Harris Corporation |
| 英文描述： | 70A, 600V, UFS Series N-Channel IGBT |
| 中文描述： | 第70A，600V的，的ufs系列N溝道IGBT的 |
| 文件頁數(shù)： | 6/6頁 |
| 文件大?。?/td> | 65K |
| 代理商： | HGTG40N6 |
9-8
HGTG40N60B3
Operating Frequency Information
Operating frequency information for a typical device (Figure
13) is presented as a guide for estimating device performance
for a specific application. Other typical frequency vs collector
current (I
CE
) plots are possible using the information shown
for a typical unit in Figures 4, 7, 8, 11 and 12. The operating
frequency plot (Figure 13) of a typical device shows f
MAX1
or
f
MAX2
whichever is smaller at each point. The information is
based on measurements of a typical device and is bounded
by the maximum rated junction temperature.
f
MAX1
is defined by f
MAX1
= 0.05/(t
D(OFF)I
+ t
D(ON)I
). Dead-
time (the denominator) has been arbitrarily held to 10% of
the on-state time for a 50% duty factor. Other definitions are
possible. t
D(OFF)I
and t
D(ON)I
are defined in Figure 17.
Device turn-off delay can establish an additional frequency
limiting condition for an application other than T
JMAX
.
t
D(OFF)I
is important when controlling output ripple under a
lightly loaded condition.
f
MAX2
is defined by f
MAX2
= (P
D
- P
C
)/(E
OFF
+ E
ON
). The allow-
able dissipation (P
D
) is defined by P
D
= (T
JMAX
- T
C
)/R
θ
JC
.
The sum of device switching and conduction losses must not
exceed P
D
. A 50% duty factor was used (Figure 13) and the
conduction losses (P
C
) are approximated by P
C
= (V
CE
x
I
CE
)/2.
E
ON
and E
OFF
are defined in the switching waveforms
shown in Figure 17. E
ON
is the integral of the instantaneous
power loss (I
CE
x V
CE
) during turn-on and E
OFF
is the inte-
gral of the instantaneous power loss (I
CE
x V
CE
) during turn-
off. All tail losses are included in the calculation of E
OFF
;
i.e.the collector current equals zero (I
CE
= 0).
Handling Precautions for IGBT’s
Insulated Gate Bipolar Transistors are susceptible to gate-
insulation damage by the electrostatic discharge of energy
through the devices. When handling these devices, care
should be exercised to assure that the static charge built in
the handler’s body capacitance is not discharged through
the device. With proper handling and application proce-
dures, however, IGBT’s are currently being extensively used
in military, industrial and consumer applications, with virtu-
ally no damage problems due to electrostatic discharge.
IGBT’s can be handled safely if the following basic precau-
tions are taken:
1. Prior to assembly into a circuit, all leads should be kept
shorted together either by the use of metal shorting
springs or by the insertion into conductive material such
as
”ECCOSORBD LD26” or equivalent.
2. When devices are removed by hand from their carriers,
the hand being used should be grounded by any suitable
means - for example, with a metallic wristband.
3. Tips of soldering irons should be grounded.
4. Devices should never be inserted into or removed from
circuits with power on.
5.
Gate Voltage Rating
- Never exceed the gate-voltage rat-
ing of V
GEM
. Exceeding the rated V
GE
can result in per-
manent damage to the oxide layer in the gate region.
6.
Gate Termination
- The gates of these devices are es-
sentially capacitors. Circuits that leave the gate open-cir-
cuited or floating should be avoided. These conditions
can result in turn-on of the device due to voltage buildup
on the input capacitor due to leakage currents or pickup.
7.
Gate Protection
- These devices do not have an internal
monolithic zener diode from gate to emitter. If gate
protection is required an external zener is recommended.
Trademark Emerson and Cumming, Inc.
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| HGTG40N60A4 | 功能描述:IGBT 晶體管 600V N-Channel IGBT SMPS Series RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| HGTG40N60A4 | 制造商:Fairchild Semiconductor Corporation 功能描述:IGBT N TO-247 |
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| HGTG40N60B3 | 制造商:Fairchild Semiconductor Corporation 功能描述:IGBT IC |
| HGTG40N60B3_NL | 制造商:Rochester Electronics LLC 功能描述: 制造商:Fairchild Semiconductor Corporation 功能描述: |
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