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參數(shù)資料
| 型號： | HGTG40N6 |
| 廠商： | Harris Corporation |
| 英文描述： | 70A, 600V, UFS Series N-Channel IGBT |
| 中文描述： | 第70A，600V的，的ufs系列N溝道IGBT的 |
| 文件頁數(shù)： | 3/6頁 |
| 文件大?。?/td> | 65K |
| 代理商： | HGTG40N6 |
9-5
HGTG40N60B3
Typical Performance Curves
FIGURE 1. TRANSFER CHARACTERISTICS
FIGURE 2. SATURATION CHARACTERISTICS
FIGURE 3. DC COLLECTOR CURRENT vs CASE TEMPERATURE
FIGURE 4. COLLECTOR-EMITTER ON-STATE VOLTAGE
FIGURE 5. CAPACITANCE vs COLLECTOR-EMITTER VOLTAGE
FIGURE 6. GATE CHARGE WAVEFORMS
I
C
,
V
GE
, GATE-TO-EMITTER VOLTAGE (V)
PULSE DURATION = 250
μ
s, DUTY CYCLE <0.5%, V
CE
= 10V
0
2
4
6
8
10
12
0
20
40
60
80
100
120
140
160
180
200
T
C
= -40
o
C
T
C
= +150
o
C
T
C
= +25
o
C
I
C
,
V
CE
, COLLECTOR-TO-EMITTER VOLTAGE (V)
12V
10V
8.5V
8.0V
7.0V
PULSE DURATION = 250
μ
s, DUTY CYCLE <0.5%, T
C
= +25
o
C
200
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
5
0
20
40
60
80
100
120
140
160
180
9V
7.5V
9.5V
V
GE
= 15V
I
C
,
T
C
, CASE TEMPERATURE (
o
C)
25
50
75
100
125
150
0
10
20
30
40
50
60
70
80
90
100
PACKAGE LIMIT
DIE LIMIT
V
GE
= 15V
I
C
,
V
CE
, COLLECTOR-TO-EMITTER VOLTAGE (V)
T
C
= +150
o
C
PULSE DURATION = 250
μ
s, DUTY CYCLE <0.5%, V
GE
= 15V
0
1
2
3
4
0
50
100
150
200
T
C
= -40
o
C
T
C
= +25
o
C
C
V
CE
, COLLECTOR-TO-EMITTER VOLTAGE (V)
FREQUENCY = 1MHz
0
5
10
15
20
25
0
2
4
6
8
10
12
14
C
OSS
C
ISS
C
RSS
BV
CE
= 200V
V
G
,
V
C
,
Q
G
, GATE CHARGE (nC)
I
G(REF)
= 4.06mA, R
L
= 7.5
, T
C
= +25
o
C
0
50
100
150
200
250
0
150
300
450
600
0
5
10
15
20
BV
CE
= 600V
BV
CE
= 400V
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HGTG40N60A4 | 功能描述:IGBT 晶體管 600V N-Channel IGBT SMPS Series RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| HGTG40N60A4 | 制造商:Fairchild Semiconductor Corporation 功能描述:IGBT N TO-247 |
| HGTG40N60B3 | 功能描述:IGBT 晶體管 600V N-Channel IGBT UFS Series RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| HGTG40N60B3 | 制造商:Fairchild Semiconductor Corporation 功能描述:IGBT IC |
| HGTG40N60B3_NL | 制造商:Rochester Electronics LLC 功能描述: 制造商:Fairchild Semiconductor Corporation 功能描述: |
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