參數(shù)資料
型號(hào)： HGTG40N6
廠商： Harris Corporation
英文描述： 70A, 600V, UFS Series N-Channel IGBT
中文描述： 第70A，600V的，的ufs系列N溝道IGBT的
文件頁(yè)數(shù)： 4/6頁(yè)
文件大?。?/td> 65K
代理商： HGTG40N6
9-6
HGTG40N60B3
FIGURE 7. TURN-ON DELAY TIME AS A FUNCTION OF
COLLECTOR-EMITTER CURRENT
FIGURE 8. TURN-OFF DELAY TIME AS A FUNCTION OF
COLLECTOR-EMITTER CURRENT
FIGURE 9. TURN-ON RISE TIME AS A FUNCTION OF
COLLECTOR-EMITTER CURRENT
FIGURE 10. TURN-OFF FALL TIME AS A FUNCTION OF
COLLECTOR-EMITTER CURRENT
FIGURE 11. TURN-ON ENERGY LOSS AS A FUNCTION OF
COLLECTOR-EMITTER CURRENT
FIGURE 12. TURN-OFF ENERGY LOSS AS A FUNCTION OF
COLLECTOR-EMITTER CURRENT
Typical Performance Curves
(Continued)
t
D
,
I
CE
, COLLECTOR-EMITTER CURRENT (A)
T
J
= +150
o
C, R
G
= 3
, L = 100
μ
H
10
20
30
40
50
60
70
80
90
100
10
20
30
50
70
100
10
20
30
40
50
60
70
80
90
100
200
250
300
350
400
I
CE
, COLLECTOR-EMITTER CURRENT (A)
T
J
= +150
o
C, R
G
= 3
, L = 100
μ
H
t
D
,
V
CE(PK)
= 480V, V
GE
= 15V
I
CE
, COLLECTOR-EMITTER CURRENT (A)
T
J
= +150
o
C, R
G
= 3
, L = 100
μ
H
t
R
,
10
20
30
40
50
60
70
80
90
100
10
20
30
50
70
100
V
CE(PK)
= 480V, V
GE
= 15V
I
CE
, COLLECTOR-EMITTER CURRENT (A)
T
J
= +150
o
C, R
G
= 3
, L = 100
μ
H
t
F
,
20
40
60
80
100
10
20
30
50
100
200
300
500
1000
V
CE(PK)
= 480V, V
GE
= 15V
I
CE
, COLLECTOR-EMITTER CURRENT (A)
T
J
= +150
o
C, R
G
= 3
, L = 100
μ
H
E
O
,
10
20
30
40
50
60
70
80
90
100
1
2
3
4
5
6
V
CE(PK)
= 480V, V
GE
= 15V
T
J
= +150
o
C, R
G
= 3
, L = 100
μ
H
E
O
,
10
20
30
40
50
60
70
80
90
100
0
2
4
6
8
10
V
CE(PK)
= 480V, V
GE
= 15V
I
CE
, COLLECTOR-EMITTER CURRENT (A)
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
HGTG40N60A4 功能描述:IGBT 晶體管 600V N-Channel IGBT SMPS Series RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube
HGTG40N60A4 制造商:Fairchild Semiconductor Corporation 功能描述:IGBT N TO-247
HGTG40N60B3 功能描述:IGBT 晶體管 600V N-Channel IGBT UFS Series RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube
HGTG40N60B3 制造商:Fairchild Semiconductor Corporation 功能描述:IGBT IC
HGTG40N60B3_NL 制造商:Rochester Electronics LLC 功能描述: 制造商:Fairchild Semiconductor Corporation 功能描述:
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