參數(shù)資料
型號(hào)： HGTG15N120C3
廠商： HARRIS SEMICONDUCTOR
元件分類(lèi)： 功率晶體管
英文描述： 35A, 1200V, UFS Series N-Channel IGBTs
中文描述： 35 A, 1200 V, N-CHANNEL IGBT, TO-247
文件頁(yè)數(shù)： 4/11頁(yè)
文件大?。?/td> 139K
代理商： HGTG15N120C3
4
FIGURE 7. TURN-ON DELAY TIME AS A FUNCTION OF
COLLECTOR TO EMITTER CURRENT
FIGURE 8. TURN-OFF DELAY TIME AS A FUNCTION OF
COLLECTOR TO EMITTER CURRENT
FIGURE 9. TURN-ON RISE TIME AS A FUNCTION OF
COLLECTOR TO EMITTER CURRENT
FIGURE 10. TURN-OFF FALL TIME AS A FUNCTION OF
COLLECTOR TO EMITTER CURRENT
FIGURE 11. TURN-ON ENERGY LOSS AS A FUNCTION OF
COLLECTOR TO EMITTER CURRENT
FIGURE 12. TURN-OFF ENERGY LOSS AS A FUNCTION OF
COLLECTOR TO EMITTER CURRENT
Typical Performance Curves
(Continued)
t
d
,
10
20
30
5
10
15
20
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
100
25
50
V
GE
= 10V
V
GE
= 15V
T
J
= 150
o
C, R
G
= 10
, L = 1mH, V
CE(PK)
= 960V
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
t
d
,
400
300
1005
10
15
20
25
200
600
500
30
V
GE
= 10V or 15V
T
J
= 150
o
C, R
G
= 10
, L = 1mH, V
CE(PK)
= 960V
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
t
r
,
10
100
5
10
15
20
25
V
GE
= 15V
V
GE
= 10V
T
J
= 150
o
C, R
G
= 10
, L = 1mH, V
CE(PK)
= 960V
1
300
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
t
f
,
5
10
15
20
25
30
100
300
200
400
500
V
GE
= 10V
V
GE
= 15V
T
J
= 150
o
C, R
G
= 10
, L = 1mH, V
CE(PK)
= 960V
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
05
10
15
20
E
O
,
25
T
J
= 150
o
C, R
G
= 10
, L = 1mH, V
CE(PK)
= 960V
V
GE
= 10V
V
GE
= 15V
2
4
6
8
10
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
E
O
,
5
10
15
20
25
30
2
4
6
8
10
12
0
14
16
T
J
= 150
o
C, R
G
= 10
, L = 1mH, V
CE(PK)
= 960V
V
GE
= 10V
V
GE
= 15V
HGTG15N120C3, HGTP15N120C3, HGT1S15N120C3, HGT1S15N120C3S
相關(guān)PDF資料
PDF描述
HGTP15N120C3 35A, 1200V, UFS Series N-Channel IGBTs
HGT1S15N120C3 35A, 1200V, UFS Series N-Channel IGBTs
HGT1S15N120C3S 35A, 1200V, UFS Series N-Channel IGBTs
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
HGTG15N120C3D 制造商:INTERSIL 制造商全稱(chēng):Intersil Corporation 功能描述:35A, 1200V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
HGTG18N120BN 功能描述:IGBT 晶體管 54A 1200V N-Ch RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube
HGTG18N120BND 功能描述:IGBT 晶體管 54A 1200V N-Ch w/Ant Parallel Hyprfst Dde RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube
HGTG18N120BND_07 制造商:FAIRCHILD 制造商全稱(chēng):Fairchild Semiconductor 功能描述:54A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
HGTG201N100E2 制造商:Rochester Electronics LLC 功能描述:- Bulk
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