參數(shù)資料
型號(hào)： HGTG15N120C3
廠商： HARRIS SEMICONDUCTOR
元件分類： 功率晶體管
英文描述： 35A, 1200V, UFS Series N-Channel IGBTs
中文描述： 35 A, 1200 V, N-CHANNEL IGBT, TO-247
文件頁數(shù)： 3/11頁
文件大?。?/td> 139K
代理商： HGTG15N120C3
3
Typical Performance Curves
FIGURE 1. TRANSFER CHARACTERISTICS
FIGURE 2. SATURATION CHARACTERISTICS
FIGURE 3. COLLECTOR TO EMITTER ON-STATE VOLTAGE
FIGURE 4. COLLECTOR TO EMITTER ON-STATE VOLTAGE
FIGURE 5. DC COLLECTOR CURRENT AS A FUNCTION OF
CASE TEMPERATURE
FIGURE 6. SHORT CIRCUIT WITHSTAND TIME
10
14
I
C
,
6
V
GE
, GATE TO EMITTER VOLTAGE (V)
80
0
100
DUTY CYCLE <0.5%, V
CE
= 10V
PULSE DURATION = 250
μ
s
T
C
= -55
o
C
T
C
= 150
o
C
T
C
= 25
o
C
12
8
20
40
60
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
80
0
10
20
0
I
C
,
DUTY CYCLE <0.5%, T
C
= 25
o
C
PULSE DURATION = 250
μ
s
V
GE
= 15V
12V
10V
9V
8.5V
8V
60
40
2
6
8
4
I
C
,
0
6
10
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
25
10
PULSE DURATION = 250
μ
s
DUTY CYCLE <0.5%, V
GE
= 10V
T
C
= 150
o
C
T
C
= 25
o
C
4
2
8
0
5
15
20
I
C
,
4
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
20
10
100
PULSE DURATION = 250
μ
s
DUTY CYCLE <0.5%, V
GE
= 15V
T
C
= 25
o
C
T
C
= 150
o
C
40
60
80
0
0
2
6
8
25
50
75
100
125
150
0
5
10
15
20
25
I
C
,
T
C
, CASE TEMPERATURE (
o
C)
V
GE
= 15V
30
35
I
S
,
25
75
125
t
S
,
μ
s
10
11
V
GE
, GATE TO EMITTER VOLTAGE (V)
12
14
15
13
150
100
50
I
SC
t
SC
15
30
35
V
CE
= 720V, R
GE
= 25
, T
J
= 125
o
C
25
20
10
HGTG15N120C3, HGTP15N120C3, HGT1S15N120C3, HGT1S15N120C3S
相關(guān)PDF資料
PDF描述
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
HGTG15N120C3D 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:35A, 1200V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
HGTG18N120BN 功能描述:IGBT 晶體管 54A 1200V N-Ch RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube
HGTG18N120BND 功能描述:IGBT 晶體管 54A 1200V N-Ch w/Ant Parallel Hyprfst Dde RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube
HGTG18N120BND_07 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:54A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
HGTG201N100E2 制造商:Rochester Electronics LLC 功能描述:- Bulk
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