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參數(shù)資料
| 型號(hào)： | HGT1S15N120C3 |
| 廠(chǎng)商： | HARRIS SEMICONDUCTOR |
| 元件分類(lèi)： | 功率晶體管 |
| 英文描述： | 35A, 1200V, UFS Series N-Channel IGBTs |
| 中文描述： | 35 A, 1200 V, N-CHANNEL IGBT, TO-262AA |
| 文件頁(yè)數(shù)： | 7/11頁(yè) |
| 文件大?。?/td> | 139K |
| 代理商： | HGT1S15N120C3 |
7
HGTG15N120C3, HGTP15N120C3, HGT1S15N120C3, HGT1S15N120C3S
TO-247
3 LEAD JEDEC STYLE TO-247 PLASTIC PACKAGE
LEAD NO. 1
-
GATE
LEAD NO. 2
-
COLLECTOR
LEAD NO. 3
-
EMITTER
TERM. 4
MOUNTING
FLANGE
-
COLLECTOR
A
b
b
1
b
2
c
D
E
L
L
1
R
1
2
e
1
3
1
J
1
S
Q
P
BACK VIEW
TERM. 4
3
e
2
SYMBOL
INCHES
MILLIMETERS
NOTES
MIN
MAX
MIN
MAX
A
0.180
0.190
4.58
4.82
-
b
0.046
0.051
1.17
1.29
2, 3
b
1
b
2
c
0.060
0.070
1.53
1.77
1, 2
0.095
0.105
2.42
2.66
1, 2
0.020
0.026
0.51
0.66
1, 2, 3
D
0.800
0.820
20.32
20.82
-
E
0.605
0.625
15.37
15.87
-
e
0.219 TYP
5.56 TYP
4
e
1
J
1
L
0.438 BSC
11.12 BSC
4
0.090
0.105
2.29
2.66
5
0.620
0.640
15.75
16.25
-
L
1
P
0.145
0.155
3.69
3.93
1
0.138
0.144
3.51
3.65
-
Q
0.210
0.220
5.34
5.58
-
R
0.195
0.205
4.96
5.20
-
S
0.260
0.270
6.61
6.85
-
NOTES:
1. Lead dimension and finish uncontrolled in L
1
.
2. Lead dimension (without solder).
3. Add typically 0.002 inches (0.05mm) for solder coating.
4. Position of lead to be measured 0.250 inches (6.35mm) from bottom
of dimension D.
5. Position of lead to be measured 0.100 inches (2.54mm) from bottom
of dimension D.
6. Controlling dimension: Inch.
7. Revision 1 dated 1-93.
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| HGTG20N120C3D | 45A, 1200V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HGT1S15N120C3S | 制造商:Rochester Electronics LLC 功能描述:- Bulk 制造商:Harris Corporation 功能描述: |
| HGT1S1N120BNDS | 制造商:INTERSIL 制造商全稱(chēng):Intersil Corporation 功能描述:5.3A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode |
| HGT1S1N120BNDS9A | 制造商:未知廠(chǎng)家 制造商全稱(chēng):未知廠(chǎng)家 功能描述:TRANSISTOR | IGBT | N-CHAN | 1.2KV V(BR)CES | 5.3A I(C) | TO-263AB |
| HGT1S1N120CNDS | 制造商:INTERSIL 制造商全稱(chēng):Intersil Corporation 功能描述:6.2A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode |
| HGT1S1N120CNDS9A | 制造商:未知廠(chǎng)家 制造商全稱(chēng):未知廠(chǎng)家 功能描述:TRANSISTOR | IGBT | N-CHAN | 1.2KV V(BR)CES | 6.2A I(C) | TO-263AB |
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