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參數(shù)資料
| 型號： | HGT1S15N120C3 |
| 廠商： | HARRIS SEMICONDUCTOR |
| 元件分類： | 功率晶體管 |
| 英文描述： | 35A, 1200V, UFS Series N-Channel IGBTs |
| 中文描述： | 35 A, 1200 V, N-CHANNEL IGBT, TO-262AA |
| 文件頁數(shù)： | 2/11頁 |
| 文件大?。?/td> | 139K |
| 代理商： | HGT1S15N120C3 |
2
Absolute Maximum Ratings
T
C
= 25
o
C, Unless Otherwise Specified
HGTG15N120C3, HGTP15N120C3,
HGT1S15N120C3S, HGT1S15N120C3S
1200
UNITS
V
Collector to Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .BV
CES
Collector Current Continuous
At T
C
= 25
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I
C25
At T
C
= 110
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
C110
Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
CM
Gate to Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V
GES
Gate to Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
GEM
Switching Safe Operating Area at T
J
= 150
o
C, Figure 14 . . . . . . . . . . . . . . SSOA
Power Dissipation Total at T
C
= 25
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
D
Power Dissipation Derating T
C
> 25
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Reverse Voltage Avalanche Energy. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .E
ARV
Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . T
J
, T
STG
Maximum Lead Temperature for Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
L
Short Circuit Withstand Time (Note 2) at V
GE
= 15V . . . . . . . . . . . . . . . . . . . . t
SC
Short Circuit Withstand Time (Note 2) at V
GE
= 10V . . . . . . . . . . . . . . . . . . . . t
SC
35
15
120
±
20
±
30
A
A
A
V
V
15A at 1200V
164
1.32
100
-55 to 150
260
6
25
W
W/
o
C
mJ
o
C
o
C
μ
s
μ
s
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation
of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTES:
1. Pulse width limited by maximum junction temperature.
2. V
CE(PK)
= 720V, T
J
= 125
o
C, R
GE
= 25
.
Electrical Specifications
T
C
= 25
o
C, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Collector to Emitter Breakdown Voltage
BV
CES
BV
ECS
I
CES
I
C
= 250
μ
A, V
GE
= 0V
I
C
= 10mA, V
GE
= 0V
V
CE
= BV
CES
1200
-
-
V
Emitter to Collector Breakdown Voltage
15
25
-
V
Collector to Emitter Leakage Current
T
C
= 25
o
C
T
C
= 150
o
C
T
C
= 25
o
C
T
C
= 150
o
C
-
-
250
μ
A
-
-
3.0
mA
Collector to Emitter Saturation Voltage
V
CE(SAT)
I
C
= I
C110
,
V
GE
= 15V
-
2.3
3.5
V
-
2.4
3.2
V
Gate to Emitter Threshold Voltage
V
GE(TH)
I
GES
SSOA
I
C
= 250
μ
A, V
CE
= V
GE
V
GE
=
±
20V
T
J
= 150
o
C, R
G
= 10
V
GE
= 15V, L = 1mH
4.0
5.6
7.5
V
Gate to Emitter Leakage Current
-
-
±
100
nA
Switching SOA
V
CE(PK)
= 960V
V
CE(PK)
= 1200V
40
-
-
A
15
-
-
A
Gate to Emitter Plateau Voltage
V
GEP
Q
g(ON)
I
C
= I
C110
, V
CE
= 0.5 BV
CES
I
C
= I
C110
,
V
CE
= 0.5 BV
ES
-
8.8
-
V
On-State Gate Charge
V
GE
= 15V
V
GE
= 20V
-
75
100
nC
-
100
130
nC
Current Turn-On Delay Time
t
d(ON)I
t
rI
t
d(OFF)I
t
fI
E
ON
E
OFF
R
θ
JC
T
J
= 150
o
C
I
CE
= I
C110
V
CE(PK)
= 0.8 BV
CES
V
GE
= 15V
R
G
= 10
L = 1mH
-
17
-
ns
Current Rise Time
-
25
-
ns
Current Turn-Off Delay Time
-
470
550
ns
Current Fall Time
-
350
400
ns
Turn-On Energy
-
2100
-
μ
J
Turn-Off Energy (Note 3)
-
4700
-
μ
J
Thermal Resistance
-
-
0.76
o
C/W
NOTE:
3. Turn-Off Energy Loss (E
OFF
) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and
ending at the point where the collector current equals zero (I
CE
= 0A). All devices were tested per JEDEC standard No. 24-1 Method for
Measurement of Power Device Turn-Off Switching Loss. This test method produces the true total Turn-Off Energy Loss. Turn-On losses
include losses due to diode recovery.
HGTG15N120C3, HGTP15N120C3, HGT1S15N120C3, HGT1S15N120C3S
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| HGT1S15N120C3S | 制造商:Rochester Electronics LLC 功能描述:- Bulk 制造商:Harris Corporation 功能描述: |
| HGT1S1N120BNDS | 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:5.3A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode |
| HGT1S1N120BNDS9A | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | IGBT | N-CHAN | 1.2KV V(BR)CES | 5.3A I(C) | TO-263AB |
| HGT1S1N120CNDS | 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:6.2A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode |
| HGT1S1N120CNDS9A | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | IGBT | N-CHAN | 1.2KV V(BR)CES | 6.2A I(C) | TO-263AB |
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