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參數(shù)資料
| 型號(hào)： | HGT1S15N120C3 |
| 廠商： | HARRIS SEMICONDUCTOR |
| 元件分類： | 功率晶體管 |
| 英文描述： | 35A, 1200V, UFS Series N-Channel IGBTs |
| 中文描述： | 35 A, 1200 V, N-CHANNEL IGBT, TO-262AA |
| 文件頁(yè)數(shù)： | 3/11頁(yè) |
| 文件大?。?/td> | 139K |
| 代理商： | HGT1S15N120C3 |
3
Typical Performance Curves
FIGURE 1. TRANSFER CHARACTERISTICS
FIGURE 2. SATURATION CHARACTERISTICS
FIGURE 3. COLLECTOR TO EMITTER ON-STATE VOLTAGE
FIGURE 4. COLLECTOR TO EMITTER ON-STATE VOLTAGE
FIGURE 5. DC COLLECTOR CURRENT AS A FUNCTION OF
CASE TEMPERATURE
FIGURE 6. SHORT CIRCUIT WITHSTAND TIME
10
14
I
C
,
6
V
GE
, GATE TO EMITTER VOLTAGE (V)
80
0
100
DUTY CYCLE <0.5%, V
CE
= 10V
PULSE DURATION = 250
μ
s
T
C
= -55
o
C
T
C
= 150
o
C
T
C
= 25
o
C
12
8
20
40
60
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
80
0
10
20
0
I
C
,
DUTY CYCLE <0.5%, T
C
= 25
o
C
PULSE DURATION = 250
μ
s
V
GE
= 15V
12V
10V
9V
8.5V
8V
60
40
2
6
8
4
I
C
,
0
6
10
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
25
10
PULSE DURATION = 250
μ
s
DUTY CYCLE <0.5%, V
GE
= 10V
T
C
= 150
o
C
T
C
= 25
o
C
4
2
8
0
5
15
20
I
C
,
4
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
20
10
100
PULSE DURATION = 250
μ
s
DUTY CYCLE <0.5%, V
GE
= 15V
T
C
= 25
o
C
T
C
= 150
o
C
40
60
80
0
0
2
6
8
25
50
75
100
125
150
0
5
10
15
20
25
I
C
,
T
C
, CASE TEMPERATURE (
o
C)
V
GE
= 15V
30
35
I
S
,
25
75
125
t
S
,
μ
s
10
11
V
GE
, GATE TO EMITTER VOLTAGE (V)
12
14
15
13
150
100
50
I
SC
t
SC
15
30
35
V
CE
= 720V, R
GE
= 25
, T
J
= 125
o
C
25
20
10
HGTG15N120C3, HGTP15N120C3, HGT1S15N120C3, HGT1S15N120C3S
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HGT1S15N120C3S | 制造商:Rochester Electronics LLC 功能描述:- Bulk 制造商:Harris Corporation 功能描述: |
| HGT1S1N120BNDS | 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:5.3A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode |
| HGT1S1N120BNDS9A | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | IGBT | N-CHAN | 1.2KV V(BR)CES | 5.3A I(C) | TO-263AB |
| HGT1S1N120CNDS | 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:6.2A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode |
| HGT1S1N120CNDS9A | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | IGBT | N-CHAN | 1.2KV V(BR)CES | 6.2A I(C) | TO-263AB |
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