- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄383057 > HGT1S15N120C3 (HARRIS SEMICONDUCTOR) 35A, 1200V, UFS Series N-Channel IGBTs PDF資料下載
參數(shù)資料
| 型號： | HGT1S15N120C3 |
| 廠商： | HARRIS SEMICONDUCTOR |
| 元件分類： | 功率晶體管 |
| 英文描述： | 35A, 1200V, UFS Series N-Channel IGBTs |
| 中文描述： | 35 A, 1200 V, N-CHANNEL IGBT, TO-262AA |
| 文件頁數(shù)： | 4/11頁 |
| 文件大?。?/td> | 139K |
| 代理商： | HGT1S15N120C3 |
4
FIGURE 7. TURN-ON DELAY TIME AS A FUNCTION OF
COLLECTOR TO EMITTER CURRENT
FIGURE 8. TURN-OFF DELAY TIME AS A FUNCTION OF
COLLECTOR TO EMITTER CURRENT
FIGURE 9. TURN-ON RISE TIME AS A FUNCTION OF
COLLECTOR TO EMITTER CURRENT
FIGURE 10. TURN-OFF FALL TIME AS A FUNCTION OF
COLLECTOR TO EMITTER CURRENT
FIGURE 11. TURN-ON ENERGY LOSS AS A FUNCTION OF
COLLECTOR TO EMITTER CURRENT
FIGURE 12. TURN-OFF ENERGY LOSS AS A FUNCTION OF
COLLECTOR TO EMITTER CURRENT
Typical Performance Curves
(Continued)
t
d
,
10
20
30
5
10
15
20
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
100
25
50
V
GE
= 10V
V
GE
= 15V
T
J
= 150
o
C, R
G
= 10
, L = 1mH, V
CE(PK)
= 960V
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
t
d
,
400
300
1005
10
15
20
25
200
600
500
30
V
GE
= 10V or 15V
T
J
= 150
o
C, R
G
= 10
, L = 1mH, V
CE(PK)
= 960V
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
t
r
,
10
100
5
10
15
20
25
V
GE
= 15V
V
GE
= 10V
T
J
= 150
o
C, R
G
= 10
, L = 1mH, V
CE(PK)
= 960V
1
300
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
t
f
,
5
10
15
20
25
30
100
300
200
400
500
V
GE
= 10V
V
GE
= 15V
T
J
= 150
o
C, R
G
= 10
, L = 1mH, V
CE(PK)
= 960V
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
05
10
15
20
E
O
,
25
T
J
= 150
o
C, R
G
= 10
, L = 1mH, V
CE(PK)
= 960V
V
GE
= 10V
V
GE
= 15V
2
4
6
8
10
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
E
O
,
5
10
15
20
25
30
2
4
6
8
10
12
0
14
16
T
J
= 150
o
C, R
G
= 10
, L = 1mH, V
CE(PK)
= 960V
V
GE
= 10V
V
GE
= 15V
HGTG15N120C3, HGTP15N120C3, HGT1S15N120C3, HGT1S15N120C3S
相關PDF資料 |
PDF描述 |
|---|---|
| HGT1S15N120C3S | 35A, 1200V, UFS Series N-Channel IGBTs |
| HGTG20N100D2 | 20A, 1000V N-Channel IGBT |
| HGTG20N120C3D | 45A, 1200V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode |
| HI1106 | 8-Bit, 35 MSPS, High Speed D/A Converter (TTL Input) |
| HI1106JCB | 8-Bit, 35 MSPS, High Speed D/A Converter (TTL Input) |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| HGT1S15N120C3S | 制造商:Rochester Electronics LLC 功能描述:- Bulk 制造商:Harris Corporation 功能描述: |
| HGT1S1N120BNDS | 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:5.3A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode |
| HGT1S1N120BNDS9A | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | IGBT | N-CHAN | 1.2KV V(BR)CES | 5.3A I(C) | TO-263AB |
| HGT1S1N120CNDS | 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:6.2A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode |
| HGT1S1N120CNDS9A | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | IGBT | N-CHAN | 1.2KV V(BR)CES | 6.2A I(C) | TO-263AB |
發(fā)布緊急采購，3分鐘左右您將得到回復。