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參數資料
| 型號： | HGT1S12N60A4S9A |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | IGBT 晶體管 |
| 英文描述： | 600V, SMPS Series N-Channel IGBTs |
| 中文描述： | 54 A, 600 V, N-CHANNEL IGBT, TO-263AB |
| 封裝： | TO-263AB, 3 PIN |
| 文件頁數： | 6/8頁 |
| 文件大?。?/td> | 229K |
| 代理商： | HGT1S12N60A4S9A |
2003 Fairchild Semiconductor Corporation
HGTP12N60A4, HGTG12N60A4, HGT1S12N60A4S9A Rev. B2
FIGURE 17. CAPACITANCE vs COLLECTOR TO EMITTER
VOLTAGE
FIGURE 18. COLLECTOR TO EMITTER ON-STATE VOLTAGE
vs GATE TO EMITTER VOLTAGE
FIGURE 19. IGBT NORMALIZED TRANSIENT THERMAL RESPONSE, JUNCTION TO CASE
Test Circuit and Waveforms
FIGURE 20. INDUCTIVE SWITCHING TEST CIRCUIT
FIGURE 21. SWITCHING TEST WAVEFORMS
Typical Performance Curves Unless Otherwise Specified (Continued)
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
C
,CAP
A
C
IT
ANCE
(n
F
)
CRES
0
5
10
15
20
25
0
0.5
1.0
2.0
2.5
3.0
1.5
FREQUENCY = 1MHz
COES
CIES
VGE, GATE TO EMITTER VOLTAGE (V)
89
1.9
10
12
2.0
2.2
2.1
11
13
14
15
16
2.3
2.4
V
CE
,
COL
L
E
C
T
O
R
T
O
E
M
IT
T
E
R
V
O
L
T
A
G
E
(V
)
ICE = 18A
ICE = 12A
ICE = 6A
DUTY CYCLE < 0.5%, VGE = 15V
PULSE DURATION = 250
s, TJ = 25oC
t1, RECTANGULAR PULSE DURATION (s)
Z
θJC
,
N
O
R
M
A
LI
ZED
T
H
ER
MA
L
R
E
S
P
O
N
S
E
10-2
10-1
100
10-5
10-3
10-2
10-1
100
101
10-4
t1
t2
PD
DUTY FACTOR, D = t1 / t2
PEAK TJ = (PD X ZθJC X RθJC) + TC
SINGLE PULSE
0.1
0.2
0.5
0.05
0.01
0.02
RG = 10
L = 500
H
VDD = 390V
+
-
RHRP660
tfI
td(OFF)I
trI
td(ON)I
10%
90%
10%
90%
VCE
ICE
VGE
EOFF
EON2
HGTP12N60A4, HGTG12N60A4, HGT1S12N60A4S9A
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相關代理商/技術參數 |
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| HGT1S12N60B3 | 制造商:Rochester Electronics LLC 功能描述:- Bulk 制造商:Harris Corporation 功能描述: |
| HGT1S12N60B3D | 制造商:Rochester Electronics LLC 功能描述:- Bulk 制造商:Harris Corporation 功能描述: |
| HGT1S12N60B3DS | 制造商:Rochester Electronics LLC 功能描述:- Bulk 制造商:Harris Corporation 功能描述: |
| HGT1S12N60B3DS9A | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 12A I(C) | TO-263AB |
| HGT1S12N60B3S | 制造商:Rochester Electronics LLC 功能描述:- Bulk 制造商:Harris Corporation 功能描述: |
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