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參數(shù)資料
| 型號： | HGT1S12N60A4S9A |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | IGBT 晶體管 |
| 英文描述： | 600V, SMPS Series N-Channel IGBTs |
| 中文描述： | 54 A, 600 V, N-CHANNEL IGBT, TO-263AB |
| 封裝： | TO-263AB, 3 PIN |
| 文件頁數(shù)： | 4/8頁 |
| 文件大小： | 229K |
| 代理商： | HGT1S12N60A4S9A |
2003 Fairchild Semiconductor Corporation
HGTP12N60A4, HGTG12N60A4, HGT1S12N60A4S9A Rev. B2
FIGURE 5. COLLECTOR TO EMITTER ON-STATE VOLTAGE
FIGURE 6. COLLECTOR TO EMITTER ON-STATE VOLTAGE
FIGURE 7. TURN-ON ENERGY LOSS vs COLLECTOR TO
EMITTER CURRENT
FIGURE 8. TURN-OFF ENERGY LOSS vs
COLLECTOR TO EMITTER CURRENT
FIGURE 9. TURN-ON DELAY TIME vs COLLECTOR TO
EMITTER CURRENT
FIGURE 10. TURN-ON RISE TIME vs COLLECTOR TO
EMITTER CURRENT
Typical Performance Curves Unless Otherwise Specified (Continued)
00.5
1.0
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
I CE
,COL
L
ECT
O
R
T
O
EM
IT
T
E
R
CURRENT
(A
)
0
4
8
1.5
2
2.5
16
20
12
TJ = 125
oC
TJ = 150
oC
PULSE DURATION = 250
s
DUTY CYCLE < 0.5%, VGE = 12V
24
TJ = 25
oC
I CE
,COL
L
ECT
O
R
T
O
EM
IT
T
E
R
CURRENT
(A
)
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
DUTY CYCLE < 0.5%, VGE = 15V
PULSE DURATION = 250
s
TJ = 150
oC
TJ = 25
oC
TJ = 125
oC
0
0.5
1.0
1.5
2
2.5
4
8
16
12
20
24
0
E
ON
2
,
T
URN-
ON
ENERGY
L
O
SS
(
J)
500
300
ICE, COLLECTOR TO EMITTER CURRENT (A)
400
200
600
0
700
6
4
10
121416
818
20
22
24
TJ = 125
oC, V
GE = 12V, VGE = 15V
RG = 10, L = 500H, VCE = 390V
TJ = 25
oC, V
GE = 12V, VGE = 15V
100
2
300
ICE, COLLECTOR TO EMITTER CURRENT (A)
E
OFF
,
TURN-
O
FF
E
N
E
R
GY
LO
S
(
J)
0
50
200
100
250
350
400
TJ = 25
oC, V
GE = 12V OR 15V
TJ = 125
oC, V
GE = 12V OR 15V
150
6
4
2
10121416
8
18202224
RG = 10, L = 500H, VCE = 390V
ICE, COLLECTOR TO EMITTER CURRENT (A)
t d(
O
N
)I
,
T
URN-
ON
DEL
A
Y
T
IM
E
(n
s
)
10
11
12
13
14
15
6
4
2
1012
1416
8
1820
2224
16
17
18
TJ = 25
oC, T
J = 125
oC, V
GE = 15V
TJ = 25
oC, T
J = 125
oC, V
GE = 12V
RG = 10, L = 500H, VCE = 390V
ICE, COLLECTOR TO EMITTER CURRENT (A)
t rI
,
R
IS
E
TI
ME
(n
s)
0
4
16
12
8
6
4
2
10121416
818
20
22
24
20
32
28
24
RG = 10, L = 500H, VCE = 390V
TJ = 125
oC, OR T
J = 25
oC, V
GE = 12V
TJ = 25
oC OR T
J = 125
oC, V
GE = 15V
HGTP12N60A4, HGTG12N60A4, HGT1S12N60A4S9A
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| HGT1S12N60B3 | 制造商:Rochester Electronics LLC 功能描述:- Bulk 制造商:Harris Corporation 功能描述: |
| HGT1S12N60B3D | 制造商:Rochester Electronics LLC 功能描述:- Bulk 制造商:Harris Corporation 功能描述: |
| HGT1S12N60B3DS | 制造商:Rochester Electronics LLC 功能描述:- Bulk 制造商:Harris Corporation 功能描述: |
| HGT1S12N60B3DS9A | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 12A I(C) | TO-263AB |
| HGT1S12N60B3S | 制造商:Rochester Electronics LLC 功能描述:- Bulk 制造商:Harris Corporation 功能描述: |
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