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參數(shù)資料
| 型號(hào)： | HGT1S12N60A4S9A |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類(lèi)： | IGBT 晶體管 |
| 英文描述： | 600V, SMPS Series N-Channel IGBTs |
| 中文描述： | 54 A, 600 V, N-CHANNEL IGBT, TO-263AB |
| 封裝： | TO-263AB, 3 PIN |
| 文件頁(yè)數(shù)： | 3/8頁(yè) |
| 文件大小： | 229K |
| 代理商： | HGT1S12N60A4S9A |
2003 Fairchild Semiconductor Corporation
HGTP12N60A4, HGTG12N60A4, HGT1S12N60A4S9A Rev. B2
Current Turn-On Delay Time
td(ON)I
IGBT and Diode at TJ = 125
oC
ICE = 12A
VCE = 390V
VGE = 15V
RG = 10
L = 500
H
Test Circuit (Figure 20)
-17
-
ns
Current Rise Time
trI
-16
-
ns
Current Turn-Off Delay Time
td(OFF)I
-
110
170
ns
Current Fall Time
tfI
-70
95
ns
Turn-On Energy (Note 3)
EON1
-55
-
J
Turn-On Energy (Note 3)
EON2
-
250
350
J
Turn-Off Energy (Note 2)
EOFF
-
175
285
J
Thermal Resistance Junction To Case
RθJC
-
0.75
oC/W
NOTES:
2. Turn-Off Energy Loss (EOFF) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and ending
at the point where the collector current equals zero (ICE = 0A). All devices were tested per JEDEC Standard No. 24-1 Method for Measurement
of Power Device Turn-Off Switching Loss. This test method produces the true total Turn-Off Energy Loss.
3. Values for two Turn-On loss conditions are shown for the convenience of the circuit designer. EON1 is the turn-on loss of the IGBT only. EON2
is the turn-on loss when a typical diode is used in the test circuit and the diode is at the same TJ as the IGBT. The diode type is specified in
Figure 20.
Electrical Specifications
TJ = 25
oC, Unless Otherwise Specified (Continued)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Typical Performance Curves Unless Otherwise Specified
FIGURE 1. DC COLLECTOR CURRENT vs CASE
TEMPERATURE
FIGURE 2. MINIMUM SWITCHING SAFE OPERATING AREA
FIGURE 3. OPERATING FREQUENCY vs COLLECTOR TO
EMITTER CURRENT
FIGURE 4. SHORT CIRCUIT WITHSTAND TIME
TC, CASE TEMPERATURE (
oC)
I CE
,
DC
COL
L
ECT
O
R
CURRENT
(
A
)
50
10
0
40
20
30
25
75
100
125
150
60
50
VGE = 15V
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
700
40
0
I CE
,COL
L
E
CT
OR
T
O
EM
IT
T
E
R
CURRENT
(
A
)
10
20
300
400
200
100
500
600
0
50
60
30
70
TJ = 150
oC, R
G = 10, VGE = 15V, L = 200H
TC
VGE
15V
75oC
f MAX
,O
P
E
R
A
T
ING
F
R
E
Q
UE
NCY
(kH
z
)
1
ICE, COLLECTOR TO EMITTER CURRENT (A)
10
3
300
30
10
20
500
fMAX1 = 0.05 / (td(OFF)I + td(ON)I)
RJC = 0.75
oC/W, SEE NOTES
PC = CONDUCTION DISSIPATION
(DUTY FACTOR = 50%)
fMAX2 = (PD - PC) / (EON2 + EOFF)
TJ = 125
oC, R
G = 10, L = 500H, V CE = 390V
100
VGE, GATE TO EMITTER VOLTAGE (V)
I SC
,PEAK
SHOR
T
CIRCUI
T
CURR
E
N
T
(
A
)
t SC
,SHOR
T
CIRCUIT
WIT
H
ST
AND
T
IM
E
(
s)
910
11
12
15
0
2
10
16
50
125
175
300
tSC
ISC
20
250
13
14
4
6
8
12
14
18
75
100
150
200
225
275
VCE = 390V, RG = 10, TJ = 125
oC
HGTP12N60A4, HGTG12N60A4, HGT1S12N60A4S9A
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| HGT1S12N60B3 | 制造商:Rochester Electronics LLC 功能描述:- Bulk 制造商:Harris Corporation 功能描述: |
| HGT1S12N60B3D | 制造商:Rochester Electronics LLC 功能描述:- Bulk 制造商:Harris Corporation 功能描述: |
| HGT1S12N60B3DS | 制造商:Rochester Electronics LLC 功能描述:- Bulk 制造商:Harris Corporation 功能描述: |
| HGT1S12N60B3DS9A | 制造商:未知廠家 制造商全稱(chēng):未知廠家 功能描述:TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 12A I(C) | TO-263AB |
| HGT1S12N60B3S | 制造商:Rochester Electronics LLC 功能描述:- Bulk 制造商:Harris Corporation 功能描述: |
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