參數(shù)資料
型號： HGT1S12N60A4S9A
廠商： FAIRCHILD SEMICONDUCTOR CORP
元件分類： IGBT 晶體管
英文描述： 600V, SMPS Series N-Channel IGBTs
中文描述： 54 A, 600 V, N-CHANNEL IGBT, TO-263AB
封裝： TO-263AB, 3 PIN
文件頁數(shù)： 2/8頁
文件大?。?/td> 229K
代理商： HGT1S12N60A4S9A
2003 Fairchild Semiconductor Corporation
HGTP12N60A4, HGTG12N60A4, HGT1S12N60A4S9A Rev. B2
Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified
HGTG12N60A4, HGTP12N60A4,
HGT1S12N60A4S9A
UNITS
Collector to Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .BVCES
600
V
Collector Current Continuous
At TC = 25
oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
C25
54
A
At TC = 110
oC
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .C110
23
A
Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ICM
96
A
Gate to Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGES
±20
V
Gate to Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VGEM
±30
V
Switching Safe Operating Area at TJ = 150
oC, Figure 2 . . . . . . . . . . . . . . . . . . . . . . . . SSOA
60A at 600V
Power Dissipation Total at TC = 25
oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
D
167
W
Power Dissipation Derating TC > 25
oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
1.33
W/oC
Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG
-55 to 150
oC
Maximum Lead Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL
Package Body for 10s, See Tech Brief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TPKG
300
260
oC
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. Pulse width limited by maximum junction temperature.
Electrical Specifications
TJ = 25
oC, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Collector to Emitter Breakdown Voltage
BVCES
IC = 250A, VGE = 0V
600
-
V
Emitter to Collector Breakdown Voltage
BVECS
IC = -10mA, VGE = 0V
20
-
V
Collector to Emitter Leakage Current
ICES
VCE = 600V
TJ = 25
oC
-
250
A
TJ = 125
oC-
-
2.0
mA
Collector to Emitter Saturation Voltage
VCE(SAT)
IC = 12A,
VGE = 15V
TJ = 25
oC-
2.0
2.7
V
TJ = 125
oC-
1.6
2.0
V
Gate to Emitter Threshold Voltage
VGE(TH)
IC = 250A, VCE = 600V
-
5.6
-
V
Gate to Emitter Leakage Current
IGES
VGE = ±20V
-
±250
nA
Switching SOA
SSOA
TJ = 150
oC, R
G = 10, VGE = 15V
L = 100
H, VCE = 600V
60
-
A
Gate to Emitter Plateau Voltage
VGEP
IC = 12A, VCE = 300V
-
8
-
V
On-State Gate Charge
Qg(ON)
IC = 12A,
VCE = 300V
VGE = 15V
-
78
96
nC
VGE = 20V
-
97
120
nC
Current Turn-On Delay Time
td(ON)I
IGBT and Diode at TJ = 25
oC
ICE = 12A
VCE = 390V
VGE =15V
RG = 10
L = 500
H
Test Circuit (Figure 20)
-17
-
ns
Current Rise Time
trI
-8
-
ns
Current Turn-Off Delay Time
td(OFF)I
-96
-
ns
Current Fall Time
tfI
-18
-
ns
Turn-On Energy (Note 3)
EON1
-55
-
J
Turn-On Energy (Note 3)
EON2
-
160
-
J
Turn-Off Energy (Note 2)
EOFF
-50
-
J
HGTP12N60A4, HGTG12N60A4, HGT1S12N60A4S9A
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