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型號(hào)：	HD6433066F
元件分類：	微控制器/微處理器
英文描述：	32-BIT, MROM, MICROCONTROLLER, PQFP100
封裝：	QFP-100
文件頁(yè)數(shù)：	647/751頁(yè)
文件大小：	5077K
代理商：	HD6433066F

Section 18 ROM

Rev. 4.00 Jan 26, 2006 page 659 of 938

REJ09B0276-0400

In the boot mode, perform FWE pin High/Low switching during reset.

In transition to the boot mode, input FWE=High level and set MD

2 to MD0 while the

RES input is low. At this time, the FWE and MD

2 to MD0 inputs must satisfy the mode

programming setup time (t

MDS) relative to the reset clear timing. The mode programming

setup time is necessary for

RES reset timing even in transition from the boot mode to

another mode.

In reset during operation, the

RES pin must be held at a low level for at least 20 system

In the user program mode, FWE=High/Low switching is possible regardless of the RES

FWE input switching is also possible during program execution on flash memory.

Apply an input to FWE when the program is not running away.

When applying an input to the FWE pin, the program execution state must be

supervised using a watchdog timer, etc.

Input low level to the FWE pin when the SWE, ESU, PSU, EV, PV, E, and P bits in

FLMCR have been cleared.

Do not erroneously set the SWE, ESU, PSU, EV, PV, E, and P bits when FWE

(4) Do not input a constant high level to the FWE pin.

To prevent erroneous programming/erasing in the event of program runaway, etc., input a high

level to the FWE pin only when programming/erasing flash memory (including flash memory

emulation by RAM). Avoid system configurations that constantly input a high level to the

FWE pin. Handle program runaway, etc. by starting the watchdog timer so that flash memory

is not overprogrammed/overerased even while a high level is input to the FWE pin.

(5) Program/erase the flash memory in accordance with the recommended algorithms.

The recommended algorithms can program/erase the flash memory without applying voltage

stress to the device or sacrificing the reliability of the program data.

When setting the PSU and ESU bits in FLMCR, set the watchdog timer for program runaway,

(6) Do not set/clear the SWE bit while a program is executing on flash memory.

Before performing flash memory program execution or data read, clear the SWE bit.

If the SWE bit is set, the flash data can be reprogrammed, but flash memory cannot be

accessed for purposes other than verify (verify during programming/erase).

Similarly perform flash memory program execution and data read after clearing the SWE bit

even when using the RAM emulation function with a high level input to the FWE pin.

However, RAM area that overlaps flash memory space can be read/programmed whether the

SWE bit is set or cleared.

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