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參數(shù)資料
| 型號： | HB52D88GB-F |
| 廠商： | Hitachi,Ltd. |
| 英文描述： | 64 MB Unbuffered SDRAM Micro DIMM(64 MB 未緩沖同步DRAM DIMM) |
| 中文描述： | 64兆微型無緩沖SDRAM的內(nèi)存（64 MB的未緩沖同步的DRAM內(nèi)存） |
| 文件頁數(shù)： | 1/23頁 |
| 文件大?。?/td> | 94K |
| 代理商： | HB52D88GB-F |
Preliminary: The specification of this device are subject to change without notice. Please contact your nearest Hitachi’s
Sales Dept. regarding specification.
HB52D88GB-F
64 MB Unbuffered SDRAM Micro DIMM
8-Mword
×
64-bit, 100 MHz Memory Bus, 1-Bank Module
(4 pcs of 8 M
×
16 components)
PC100 SDRAM
ADE-203-1148 (Z)
Preliminary
Rev. 0.0
Jan. 13, 2000
Description
The HB52D88GB is a 8M
×
64
×
1 banks Synchronous Dynamic RAM Micro Dual In-line Memory Module
(Micro DIMM), mounted 4 pieces of 128-Mbit SDRAM (HM5212165FTD) sealed in TSOP package and 1
piece of serial EEPROM (2-kbit EEPROM) for Presence Detect (PD). An outline of the product is 144-pin
Zig Zag Dual tabs socket type compact and thin package. Therefore, it makes high density mounting possible
without surface mount technology. It provides common data inputs and outputs. Decoupling capacitors are
mounted beside TSOP on the module board.
Features
144-pin Zig Zag Dual tabs socket type
Outline: 38.00 mm (Length)
×
30.00 mm (Height)
×
3.80 mm (Thickness)
Lead pitch: 0.50 mm
3.3 V power supply
Clock frequency: 100 MHz (max)
LVTTL interface
Data bus width:
×
64 Non parity
Single pulsed
RAS
4 Banks can operates simultaneously and independently
Burst read/write operation and burst read/single write operation capability
Programmable burst length : 1/2/4/8/full page
2 variations of burst sequence
Sequential (BL = 1/2/4/8/full page)
Interleave (BL = 1/2/4/8)
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