參數(shù)資料
型號: HAT3008RJ
廠商: Hitachi,Ltd.
英文描述: Silicon N/P Channel Power MOS FET High Speed Power Switching
中文描述: 硅N / P系列通道功率MOS FET的高速電源開關(guān)
文件頁數(shù): 4/15頁
文件大?。?/td> 81K
代理商: HAT3008RJ
HAT3008R/HAT3008RJ
4
( P Channel )
Item
Symbol Min
Typ
Max
Unit
Test Conditions
Drain to source breakdown voltage
V
(BR)DSS
V
(BR)GSS
I
GSS
I
DSS
I
DSS
I
DSS
I
DSS
V
GS(off)
R
DS(on)
R
DS(on)
|y
fs
|
Ciss
– 60
V
I
D
= – 10 mA, V
GS
= 0
I
G
=
±
100
μ
A, V
DS
= 0
V
GS
=
±
16 V, V
DS
= 0
V
DS
= – 60 V, V
GS
= 0
Gate to source breakdown voltage
±
20
V
Gate to source leak current
±
10
μ
A
μ
A
μ
A
μ
A
μ
A
Zero gate voltage
HAT3008R
–1
drain current
HAT3008RJ
–0.1
Zero gate voltage
HAT3008R
V
DS
= – 48 V, V
GS
= 0
Ta = 125
°
C
drain current
HAT3008RJ
–10
Gate to source cutoff voltage
–1.2
–2.2
V
V
DS
= – 10 V,
I
D
= – 1mA
I
D
= – 2 A, V
GS
= – 10 V
Note4
I
D
= – 2 A, V
GS
= – 4 V
Note4
I
D
= – 2 A, V
DS
= –10 V
Note4
V
DS
= –10 V
V
GS
= 0
f = 1MHz
Static drain to source on state
0.12
0.15
resistance
0.16
0.23
Forward transfer admittance
3
4.5
S
Input capacitance
600
pF
Output capacitance
Coss
290
pF
Reverse transfer capacitance
Crss
75
pF
Turn-on delay time
t
d(on)
t
r
t
d(off)
t
f
V
DF
t
rr
11
ns
V
GS
= –10 V, I
D
= – 2 A
V
DD
– 30 V
Rise time
30
ns
Turn-off delay time
100
ns
Fall time
55
ns
Body–drain diode forward voltage
– 0.98 – 1.28 V
IF = – 3.5 A, V
GS
= 0
Note4
IF = – 3.5 A, V
GS
= 0
diF/ dt = 50 A/
μ
s
Body–drain diode reverse
recovery time
Note:
5. Pulse test
70
ns
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