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參數(shù)資料
| 型號： | HAT3008RJ |
| 廠商： | Hitachi,Ltd. |
| 英文描述： | Silicon N/P Channel Power MOS FET High Speed Power Switching |
| 中文描述： | 硅N / P系列通道功率MOS FET的高速電源開關(guān) |
| 文件頁數(shù)： | 3/15頁 |
| 文件大?。?/td> | 81K |
| 代理商： | HAT3008RJ |
HAT3008R/HAT3008RJ
3
Electrical Characteristics
(Ta = 25
°
C)
( N Channel )
Item
Symbol Min
Typ
Max
Unit
Test Conditions
Drain to source breakdown voltage
V
(BR)DSS
V
(BR)GSS
I
GSS
I
DSS
60
—
—
V
I
D
= 10 mA, V
GS
= 0
I
G
=
±
100
μ
A, V
DS
= 0
V
GS
=
±
16 V, V
DS
= 0
V
DS
= 60 V, V
GS
= 0
Gate to source breakdown voltage
±
20
—
—
V
Gate to source leak current
—
—
±
10
μ
A
μ
A
μ
A
μ
A
μ
A
Zero gate voltage
HAT3008R
—
—
1
drain current
HAT3008RJ I
DSS
HAT3008R
—
—
0.1
Zero gate voltage
I
DSS
—
—
—
V
DS
= 48 V, V
GS
= 0
Ta = 125
°
C
drain current
HAT3008RJ I
DSS
—
—
10
Gate to source cutoff voltage
V
GS(off)
R
DS(on)
R
DS(on)
|y
fs
|
Ciss
1.2
—
2.2
V
V
DS
= 10 V,
I
D
= 1 mA
I
D
= 3 A, V
GS
= 10 V
Note4
I
D
= 3 A, V
GS
= 4 V
Note4
I
D
= 3 A, V
DS
= 10 V
Note4
V
DS
= 10 V
V
GS
= 0
f = 1MHz
Static drain to source on state
—
0.043
0.058
resistance
—
0.056
0.084
Forward transfer admittance
6
9
—
S
Input capacitance
—
520
—
pF
Output capacitance
Coss
—
270
—
pF
Reverse transfer capacitance
Crss
—
100
—
pF
Turn-on delay time
t
d(on)
t
r
t
d(off)
t
f
V
DF
—
11
—
ns
V
GS
=10 V, I
D
= 3 A
V
DD
30 V
Rise time
—
40
—
ns
Turn-off delay time
—
110
—
ns
Fall time
—
80
—
ns
Body–drain diode forward voltage
—
0.84
1.1
V
IF = 5 A, V
GS
= 0
Note4
Body–drain diode reverse
recovery time
Note:
5. Pulse test
t
rr
—
40
—
ns
IF =5 A, V
= 0
diF/ dt = 50 A/
μ
s
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|---|---|
| HAT3008RJ-EL-E | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon N / P Channel Power MOS FET High Speed Power Switching |
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| HAT3015R | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon N/P Channel Power MOS FET High Speed Power Switching |
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