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參數(shù)資料
| 型號(hào)： | HAT3008RJ |
| 廠商： | Hitachi,Ltd. |
| 英文描述： | Silicon N/P Channel Power MOS FET High Speed Power Switching |
| 中文描述： | 硅N / P系列通道功率MOS FET的高速電源開(kāi)關(guān) |
| 文件頁(yè)數(shù)： | 2/15頁(yè) |
| 文件大?。?/td> | 81K |
| 代理商： | HAT3008RJ |
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HAT3008R/HAT3008RJ
2
Absolute Maximum Ratings
(Ta = 25
°
C)
Item
Symbol
Ratings
Unit
Nch
Pch
Drain to source voltage
V
DSS
V
GSS
I
D
I
D(pulse)
I
DR
60
– 60
V
Gate to source voltage
±
20
±
20
V
Drain current
5
– 3.5
A
Drain peak current
Note1
40
– 28
A
Body-drain diode
5
– 3.5
A
reverse drain current
Avalanche current
HAT3008R
I
AP
Note4
—
—
—
HAT3008RJ
5
– 3.5
A
Avalanche energy
HAT3008R
E
AR
Note4
—
—
—
HAT3008RJ
2.14
1.05
mJ
Channel dissipation
Pch
Note2
2
2
W
Channel dissipation
Pch
Note3
3
3
W
Channel temperature
Tch
150
150
°
C
°
C
Storage temperature
Note:
1. PW
≤
10
μ
s, duty cycle
≤
1 %
2. 1 Drive operation : When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW
≤
10s
3. 2 Drive operation : When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW
≤
10s
4. Value at Tch=25
°
C, Rg
≥
50
Tstg
– 55 to + 150
–55 to + 150
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| HAT3008RJ-EL-E | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon N / P Channel Power MOS FET High Speed Power Switching |
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