參數(shù)資料
型號(hào): HAT3008RJ
廠商: Hitachi,Ltd.
英文描述: Silicon N/P Channel Power MOS FET High Speed Power Switching
中文描述: 硅N / P系列通道功率MOS FET的高速電源開(kāi)關(guān)
文件頁(yè)數(shù): 13/15頁(yè)
文件大?。?/td> 81K
代理商: HAT3008RJ
HAT3008R/HAT3008RJ
13
10 μ
100 μ
1 m
10 m
100 m
Pulse Width PW (S)
1
10
100
1000
10000
10
1
0.1
0.01
0.001
0.0001
D = 1
0.5
0.2
0.1
0.05
0.02
0.01
1sho puse
Normalized Transient Thermal Impedance vs. Pulse Width (1 Drive Operation)
N
s
γ
DM
P
PW
T
D =PW
T
ch – f = 125 °C/W, Ta = 25 °C
When using the glass epoxy board
(FR4 40x40x1.6 mm)
θ
γ θ
θ
10 μ
100 μ
1 m
10 m
100 m
1
10
100
1000
10000
10
1
0.1
0.01
0.001
0.0001
D = 1
0.5
0.2
0.1
0.05
0.02
0.01
1sho puse
Pulse Width PW (S)
Normalized Transient Thermal Impedance vs. Pulse Width (2 Drive Operation)
N
s
γ
DM
P
PW
T
D =T
ch – f = 166 °C/W, Ta = 25 °C
When using the glass epoxy board
(FR4 40x40x1.6 mm)
θ
γ θ
θ
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