參數(shù)資料
型號(hào): GS881Z32CGD-150IVT
廠商: GSI TECHNOLOGY
元件分類(lèi): SRAM
英文描述: 256K X 32 ZBT SRAM, 7.5 ns, PBGA165
封裝: 13 X 15 MM, 1 MM PITCH, ROHS COMPLIANT, FPBGA-165
文件頁(yè)數(shù): 14/37頁(yè)
文件大?。?/td> 1239K
代理商: GS881Z32CGD-150IVT
GS881Z18/32/36C(T/D)-xxxV
Rev: 1.00a 10/2009
21/37
2008, GSI Technology
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
Operating Currents
Parameter
Test Conditions
Mode
Symbol
-250
-200
-150
Unit
0
to 70°C
–40
to
85°C
0
to 70°C
–40
to 85°C
0
to 70°C
–40
to 85°C
Operating
Current
Device Selected;
All other inputs
VIH or VIL
Output open
(x32/x36)
Pipeline
IDD
IDDQ
200
30
220
30
170
25
190
25
140
20
160
20
mA
Flow Through
IDD
IDDQ
160
25
180
25
140
20
160
20
130
15
150
15
mA
(x18)
Pipeline
IDD
IDDQ
185
15
205
15
155
15
175
15
130
10
150
10
mA
Flow Through
IDD
IDDQ
145
15
165
15
130
10
150
10
120
8
140
8
mA
Standby
Current
ZZ
VDD – 0.2 V
Pipeline
ISB
40
50
40
50
40
50
mA
Flow Through
ISB
40
50
40
50
40
50
mA
Deselect
Current
Device Deselected;
All other inputs
VIH or VIL
Pipeline
IDD
85
90
75
80
60
65
mA
Flow Through
IDD
60
65
50
55
50
55
mA
Notes:
1. IDD and IDDQ apply to any combination of VDD1, VDD2, VDDQ1, and VDDQ2 operation.
2. All parameters listed are worst case scenario.
相關(guān)PDF資料
PDF描述
GS881Z32CGD-150VT 256K X 32 ZBT SRAM, 7.5 ns, PBGA165
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