參數(shù)資料
型號(hào)： GS88136CD-333IT
廠商： GSI TECHNOLOGY
元件分類： SRAM
英文描述： 256K X 36 CACHE SRAM, PBGA165
封裝： 13 X 15 MM, 1 MM PITCH, FPBGA-165
文件頁(yè)數(shù)： 7/37頁(yè)
文件大?。?/td> 1286K
代理商： GS88136CD-333IT
Absolute Maximum Ratings
(All voltages reference to VSS)
Symbol
Description
Value
Unit
VDD
Voltage on VDD Pins
–0.5 to 4.6
V
VDDQ
Voltage in VDDQ Pins
–0.5 to 4.6
V
VI/O
Voltage on I/O Pins
–0.5 to VDDQ +0.5 (≤ 4.6 V max.)
V
VIN
Voltage on Other Input Pins
–0.5 to VDD +0.5 (≤ 4.6 V max.)
V
IIN
Input Current on Any Pin
+/–20
mA
IOUT
Output Current on Any I/O Pin
+/–20
mA
PD
Package Power Dissipation
1.5
W
TSTG
Storage Temperature
–55 to 125
oC
TBIAS
Temperature Under Bias
–55 to 125
oC
GS88118C(T/D)/GS88132C(T/D)/GS88136C(T/D)
Rev: 1.01 6/2010
15/37
2008, GSI Technology
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
Note:
Permanent damage to the device may occur if the Absolute Maximum Ratings are exceeded. Operation should be restricted to Recommended
Operating Conditions. Exposure to conditions exceeding the Absolute Maximum Ratings, for an extended period of time, may affect reliability of
this component.
Power Supply Voltage Ranges
Parameter
Symbol
Min.
Typ.
Max.
Unit
3.3 V Supply Voltage
VDD3
3.0
3.3
3.6
V
2.5 V Supply Voltage
VDD2
2.3
2.5
2.7
V
3.3 V VDDQ I/O Supply Voltage
VDDQ3
3.0
3.3
3.6
V
2.5 V VDDQ I/O Supply Voltage
VDDQ2
2.3
2.5
2.7
V
Notes:
1. Input Under/overshoot voltage must be –2 V > Vi < VDDn+2 V not to exceed 4.6 V maximum, with a pulse width not to exceed 20% tKC.
VDD3 Range Logic Levels
Parameter
Symbol
Min.
Typ.
Max.
Unit
Notes
Input High Voltage
VIH
2.0
—
VDD + 0.3
V
—
Input Low Voltage
VIL
–0.3
—
0.8
V
—
Notes:
1. Input Under/overshoot voltage must be –2 V > Vi < VDDn+2 V not to exceed 4.6 V maximum, with a pulse width not to exceed 20% tKC.
2. VIHQ (max) is voltage on VDDQ pins plus 0.3 V.
相關(guān)PDF資料
PDF描述
GS88136CT-250V CACHE SRAM, PQFP100
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參數(shù)描述
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