參數(shù)資料
型號: GS880F36
廠商: GSI TECHNOLOGY
元件分類: DRAM
英文描述: 8Mb(256K x 36Bit) Synchronous Burst SRAM(8M位(256K x 36位)同步靜態(tài)RAM(帶2位脈沖地址計數(shù)器))
中文描述: 8MB的(256 × 36Bit)同步突發(fā)靜態(tài)存儲器(800萬位(256K × 36位)同步靜態(tài)隨機(jī)存儲器(帶2位脈沖地址計數(shù)器))
文件頁數(shù): 8/22頁
文件大?。?/td> 310K
代理商: GS880F36
Rev: 1.06 9/2000
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com
8/22
2000, Giga Semconductor, Inc.
Preliminary
GS880F18/36T-11/11.5/12/14/18
Simplified State Diagram
First Write
First Read
Burst Write
Burst Read
Deselect
R
W
CR
CW
X
X
W
R
R
W
R
X
X
X
S
S
CR
R
CW
CR
CR
Notes:
1.
2.
The diagramshows only supported (tested) synchronous state transitions. The diagrampresumes G is tied low.
The upper portion of the diagramassumes active use of only the Enable (E1E2) and Write (B
A
, B
B
, B
C
, B
D
, BW, and GW) control inputs,
and that ADSP is tied high and ADSC is tied low.
The upper and lower portions of the diagramtogether assume active use of only the Enable, Write, and ADSC control inputs, and
assumes ADSP is tied high and ADV is tied low.
3.
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