- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄383052 > GS880F36 (GSI TECHNOLOGY) 8Mb（256K x 36Bit) Synchronous Burst SRAM(8M位（256K x 36位）同步靜態(tài)RAM（帶2位脈沖地址計數(shù)器）) PDF資料下載
參數(shù)資料
| 型號： | GS880F36 |
| 廠商： | GSI TECHNOLOGY |
| 元件分類： | DRAM |
| 英文描述： | 8Mb（256K x 36Bit) Synchronous Burst SRAM(8M位（256K x 36位）同步靜態(tài)RAM（帶2位脈沖地址計數(shù)器）) |
| 中文描述： | 8MB的（256 × 36Bit）同步突發(fā)靜態(tài)存儲器（800萬位（256K × 36位）同步靜態(tài)隨機存儲器（帶2位脈沖地址計數(shù)器）） |
| 文件頁數(shù)： | 6/22頁 |
| 文件大?。?/td> | 310K |
| 代理商： | GS880F36 |
Rev: 1.06 9/2000
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com
6/22
2000, Giga Semconductor, Inc.
Preliminary
GS880F18/36T-11/11.5/12/14/18
Mode Pin Functions
Note:
There is a pull-up device on the LBO pin and a pull down device on the ZZ pin, so those input pins can be unconnected and the chip will operate
in the default states as specified in the above table.
Burst Counter Sequences
Linear Burst Sequence
BPR 1999.05.18
Byte Write Truth Table
Notes:
1.
2.
3.
4.
All byte outputs are active in read cycles regardless of the state of Byte Write Enable inputs.
Byte Write Enable inputs B
A
, B
B
, B
C,
and/or B
D
may be used in any combination with BW to write single or multiple bytes.
All byte I/Os remain High-Z during all write operations regardless of the state of Byte Write Enable inputs.
Bytes “
C
” and “
D
” are only available on the and x36 version.
Mode Name
Pin Name
State
L
H or NC
L or NC
Function
Linear Burst
Interleaved Burst
Active
Standby, I
DD
= I
SB
Burst Order Control
LBO
Power Down Control
ZZ
H
Function
GW
BW
B
A
B
B
B
C
B
D
Notes
Read
H
H
X
X
X
X
1
Read
H
L
H
H
H
H
1
Write byte a
H
L
L
H
H
H
2, 3
Write byte b
H
L
H
L
H
H
2, 3
Write byte c
H
L
H
H
L
H
2, 3, 4
Write byte d
H
L
H
H
H
L
2, 3, 4
Write all bytes
H
L
L
L
L
L
2, 3, 4
Write all bytes
L
X
X
X
X
X
Note: The burst counter wraps to initial state on the 5th clock.
I
nterleaved Burst Sequence
Note: The burst counter wraps to initial state on the 5th clock.
A[1:0]
A[1:0]
A[1:0]
A[1:0]
1st address
00
01
10
11
2nd address
01
10
11
00
3rd address
10
11
00
01
4th address
11
00
01
10
A[1:0]
A[1:0]
A[1:0]
A[1:0]
1st address
00
01
10
11
2nd address
01
00
11
10
3rd address
10
11
00
01
4th address
11
10
01
00
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| GS880Z18 | 8Mb Pipelined and Flow Through Synchronous NBT SRAM(8M位流水線式和流通型同步NBT靜態(tài)RAM) |
| GS880Z36 | 8Mb Pipelined and Flow Through Synchronous NBT SRAM(8M位流水線式和流通型同步NBT靜態(tài)RAM) |
| GS880Z36AT-133I | 9Mb Pipelined and Flow Through Synchronous NBT SRAM |
| GS880Z36AT-150 | 9Mb Pipelined and Flow Through Synchronous NBT SRAM |
| GS880Z36AT-150I | 9Mb Pipelined and Flow Through Synchronous NBT SRAM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| GS880F36AT-5.5 | 制造商:GSI 制造商全稱:GSI Technology 功能描述:512K x 18, 256K x 32, 256K x 36 8Mb Sync Burst SRAMs |
| GS880F36AT-5.5I | 制造商:GSI 制造商全稱:GSI Technology 功能描述:512K x 18, 256K x 32, 256K x 36 8Mb Sync Burst SRAMs |
| GS880F36AT-6 | 制造商:GSI 制造商全稱:GSI Technology 功能描述:512K x 18, 256K x 32, 256K x 36 8Mb Sync Burst SRAMs |
| GS880F36AT-6.5 | 制造商:GSI 制造商全稱:GSI Technology 功能描述:512K x 18, 256K x 32, 256K x 36 8Mb Sync Burst SRAMs |
| GS880F36AT-6.5I | 制造商:GSI 制造商全稱:GSI Technology 功能描述:512K x 18, 256K x 32, 256K x 36 8Mb Sync Burst SRAMs |
發(fā)布緊急采購，3分鐘左右您將得到回復。