- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄299161 > GS880E18GT-66I (GSI TECHNOLOGY) 512K X 18 CACHE SRAM, 18 ns, PQFP100 PDF資料下載
參數(shù)資料
| 型號： | GS880E18GT-66I |
| 廠商： | GSI TECHNOLOGY |
| 元件分類： | SRAM |
| 英文描述： | 512K X 18 CACHE SRAM, 18 ns, PQFP100 |
| 封裝： | TQFP-100 |
| 文件頁數(shù)： | 21/25頁 |
| 文件大?。?/td> | 850K |
| 代理商： | GS880E18GT-66I |
Rev: 1.11 11/2000
5/25
2000, Giga Semiconductor, Inc.
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
Preliminary
GS880E18/32/36T-11/11.5/100/80/66
TQFP Pin Description
Pin Location
Symbol
Typ
e
Description
37, 36
A0, A1
I
Address field LSBs and Address Counter preset Inputs
35, 34, 33, 32, 100, 99, 82, 81, 44, 45, 46,
47, 48, 49, 50, 43
A2–A17
I
Address Inputs
80
A18
I
Address Inputs
63, 62, 59, 58, 57, 56, 53, 52
68, 69, 72, 73, 74, 75, 78, 79
13, 12, 9, 8, 7, 6, 3, 2
18, 19, 22, 23, 24, 25, 28, 29
DQA1–DQA8
DQB1–DQB8
DQC1–DQC8
DQD1–DQD8
I/O
Data Input and Output pins (x32, x36 Version)
51, 80, 1, 30
DQA9, DQB9,
DQC9, DQD9
I/O
Data Input and Output pins
51, 80, 1, 30
NC
—
No Connect (x32 Version)
58, 59, 62, 63, 68, 69, 72, 73, 74
8, 9, 12, 13, 18, 19, 22, 23, 24
DQA1–DQA9
DQB1–DQB9
I/O
Data Input and Output pins
51, 52, 53, 56, 57
75, 78, 79,
1, 2, 3, 6, 7
25, 28, 29, 30
NC
—
No Connect
87
BW
I
Byte Write—Writes all enabled bytes; active low
93, 94
BA, BB
I
Byte Write Enable for DQA, DQB Data I/Os; active low
95, 96
BC, BD
I
Byte Write Enable for DQC, DQD Data I/Os; active low (x32, x36
Version)
95, 96
NC
—
No Connect (x18 Version)
89
CK
I
Clock Input Signal; active high
88
GW
I
Global Write Enable—Writes all bytes; active low
98, 92
E1, E3
I
Chip Enable; active low
97
E2
I
Chip Enable; active high
86
G
I
Output Enable; active low
83
ADV
I
Burst address counter advance enable; active low
84, 85
ADSP, ADSC
I
Address Strobe (Processor, Cache Controller); active low
64
ZZ
I
Sleep mode control; active high
14
FT
I
Flow Through or Pipeline mode; active low
31
LBO
I
Linear Burst Order mode; active low
15, 41, 65, 91
VDD
I
Core power supply
5,10,17, 21, 26, 40, 55, 60, 67, 71, 76, 90
VSS
I
I/O and Core Ground
4, 11, 20, 27, 54, 61, 70, 77
VDDQ
I
Output driver power supply
16, 38, 39, 42, 66
NC
—
No Connect.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| GS880F18T-14T | 512K X 18 CACHE SRAM, 14 ns, PQFP100 |
| GS880Z18AGT-133I | 512K X 18 ZBT SRAM, 8.5 ns, PQFP100 |
| GS88136T-11.5IT | 256K X 36 CACHE SRAM, 11.5 ns, PQFP100 |
| GS881E36BT-150T | 256K X 36 CACHE SRAM, 7.5 ns, PQFP100 |
| GS881E18BD-150 | 512K x 18, 256K x 32, 256K x 36 9Mb Sync Burst SRAMs |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| GS880E18T | 制造商:GSI 制造商全稱:GSI Technology 功能描述:512K x 18, 256K x 32, 256K x 36 8Mb Sync Burst SRAMs |
| GS880E18T-100 | 制造商:GSI 制造商全稱:GSI Technology 功能描述:512K x 18, 256K x 32, 256K x 36 8Mb Sync Burst SRAMs |
| GS880E18T-100I | 制造商:GSI 制造商全稱:GSI Technology 功能描述:512K x 18, 256K x 32, 256K x 36 8Mb Sync Burst SRAMs |
| GS880E18T-11 | 制造商:GSI 制造商全稱:GSI Technology 功能描述:512K x 18, 256K x 32, 256K x 36 8Mb Sync Burst SRAMs |
| GS880E18T-11.5 | 制造商:GSI 制造商全稱:GSI Technology 功能描述:512K x 18, 256K x 32, 256K x 36 8Mb Sync Burst SRAMs |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。