參數(shù)資料
型號(hào)： GS8662D36BD-300IT
廠商： GSI TECHNOLOGY
元件分類： SRAM
英文描述： 2M X 36 STANDARD SRAM, 0.45 ns, PBGA165
封裝： 15 X 13 MM, 1 MM PITCH, FPBGA-165
文件頁(yè)數(shù)： 8/35頁(yè)
文件大?。?/td> 755K
代理商： GS8662D36BD-300IT
Absolute Maximum Ratings
(All voltages reference to VSS)
Symbol
Description
Value
Unit
VDD
Voltage on VDD Pins
–0.5 to 2.9
V
VDDQ
Voltage in VDDQ Pins
–0.5 to VDD
V
VREF
Voltage in VREF Pins
–0.5 to VDDQ
V
VI/O
Voltage on I/O Pins
–0.5 to VDDQ +0.5 (≤ 2.9 V max.)
V
VIN
Voltage on Other Input Pins
–0.5 to VDDQ +0.5 (≤ 2.9 V max.)
V
IIN
Input Current on Any Pin
+/–100
mA dc
IOUT
Output Current on Any I/O Pin
+/–100
mA dc
TJ
Maximum Junction Temperature
125
oC
TSTG
Storage Temperature
–55 to 125
oC
Note:
Permanent damage to the device may occur if the Absolute Maximum Ratings are exceeded. Operation should be restricted to Recommended
Operating Conditions. Exposure to conditions exceeding the Recommended Operating Conditions, for an extended period of time, may affect
reliability of this component.
GS8662D08/09/18/36BD-400/350/333/300/250
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
Rev: 1.02 3/2011
16/35
2011, GSI Technology
Recommended Operating Conditions
Power Supplies
Parameter
Symbol
Min.
Typ.
Max.
Unit
Supply Voltage
VDD
1.7
1.8
1.9
V
I/O Supply Voltage
VDDQ
1.4
—
VDD
V
Reference Voltage
VREF
0.68
—
0.95
V
Notes:
1. The power supplies need to be powered up simultaneously or in the following sequence: VDD, VDDQ, VREF, followed by signal inputs. The
power down sequence must be the reverse. VDDQ must not exceed VDD.
2. Most speed grades and configurations of this device are offered in both Commercial and Industrial Temperature ranges. The part number
of Industrial Temperature Range versions end the character “I”. Unless otherwise noted, all performance specifications quoted are
evaluated for worst case in the temperature range marked on the device.
Operating Temperature
Parameter
Symbol
Min.
Typ.
Max.
Unit
Junction Temperature
(Commercial Range Versions)
TJ
0
25
85
°C
Junction Temperature
(Industrial Range Versions)*
TJ
–40
25
100
°C
Note:
* The part numbers of Industrial Temperature Range versions end with the character “I”. Unless otherwise noted, all performance specifications
quoted are evaluated for worst case in the temperature range marked on the device.
相關(guān)PDF資料
PDF描述
GS8662DT10BGD-400IT 8M X 9 QDR SRAM, 0.45 ns, PBGA165
GS8662Q18BD-357 4M X 18 STANDARD SRAM, 0.45 ns, PBGA165
GS8662Q18BGD-357IT 4M X 18 STANDARD SRAM, 0.45 ns, PBGA165
GS8662Q18GE-167IT 4M X 18 STANDARD SRAM, 0.5 ns, PBGA165
GS8662R09BD-350 8M X 9 STANDARD SRAM, 0.45 ns, PBGA165
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
GS8662D36BD-333 制造商:GSI Technology 功能描述:165 FBGA - Bulk
GS8662D36BD-350 制造商:GSI Technology 功能描述:165 FBGA - Bulk
GS8662D36BD-400 制造商:GSI Technology 功能描述:165 FBGA - Bulk
GS8662D36E-167 制造商:GSI 制造商全稱:GSI Technology 功能描述:72Mb SigmaQuad-II Burst of 4 SRAM
GS8662D36E-167I 制造商:GSI 制造商全稱:GSI Technology 功能描述:72Mb SigmaQuad-II Burst of 4 SRAM
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