參數(shù)資料
型號： GS864418GE-225IV
廠商： GSI TECHNOLOGY
元件分類： SRAM
英文描述： 4M X 18 CACHE SRAM, 6.5 ns, PBGA165
封裝： 15 X 17 MM, 1 MM PITCH, ROHS COMPLIANT, FPBGA-165
文件頁數(shù)： 24/33頁
文件大?。?/td> 528K
代理商： GS864418GE-225IV
GS864418/36E-xxxV
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
Rev: 1.07a 10/2009
30/33
2003, GSI Technology
Ordering Information for GSI Synchronous Burst RAMs
Org
Part Number1
Type
Voltage
Option
Package
Speed2
(MHz/ns)
TA3
4M x 18
GS864418E-250V
Synchronous Burst MCM
1.8 V or 2.5 V
165 BGA
250/6.5
C
4M x 18
GS864418E-225V
Synchronous Burst MCM
1.8 V or 2.5 V
165 BGA
225/6.5
C
4M x 18
GS864418E-200V
Synchronous Burst MCM
1.8 V or 2.5 V
165 BGA
200/6.5
C
4M x 18
GS864418E-166V
Synchronous Burst MCM
1.8 V or 2.5 V
165 BGA
166/8
C
4M x 18
GS864418E-150V
Synchronous Burst MCM
1.8 V or 2.5 V
165 BGA
150/8.5
C
4M x 18
GS864418E-133V
Synchronous Burst MCM
1.8 V or 2.5 V
165 BGA
133/8.5
C
2M x 36
GS864436E-250V
Synchronous Burst MCM
1.8 V or 2.5 V
165 BGA
250/6.5
C
2M x 36
GS864436E-225V
Synchronous Burst MCM
1.8 V or 2.5 V
165 BGA
225/6.5
C
2M x 36
GS864436E-200V
Synchronous Burst MCM
1.8 V or 2.5 V
165 BGA
200/6.5
C
2M x 36
GS864436E-166V
Synchronous Burst MCM
1.8 V or 2.5 V
165 BGA
166/8
C
2M x 36
GS864436E-150V
Synchronous Burst MCM
1.8 V or 2.5 V
165 BGA
150/8.5
C
2M x 36
GS864436E-133V
Synchronous Burst MCM
1.8 V or 2.5 V
165 BGA
133/8.5
C
4M x 18
GS864418E-250IV
Synchronous Burst MCM
1.8 V or 2.5 V
165 BGA
250/6.5
I
4M x 18
GS864418E-225IV
Synchronous Burst MCM
1.8 V or 2.5 V
165 BGA
225/6.5
I
4M x 18
GS864418E-200IV
Synchronous Burst MCM
1.8 V or 2.5 V
165 BGA
200/6.5
I
4M x 18
GS864418E-166IV
Synchronous Burst MCM
1.8 V or 2.5 V
165 BGA
166/8
I
4M x 18
GS864418E-150IV
Synchronous Burst MCM
1.8 V or 2.5 V
165 BGA
150/8.5
I
4M x 18
GS864418E-133IV
Synchronous Burst MCM
1.8 V or 2.5 V
165 BGA
133/8.5
I
2M x 36
GS864436E-250IV
Synchronous Burst MCM
1.8 V or 2.5 V
165 BGA
250/6.5
I
2M x 36
GS864436E-225IV
Synchronous Burst MCM
1.8 V or 2.5 V
165 BGA
225/6.5
I
2M x 36
GS864436E-200IV
Synchronous Burst MCM
1.8 V or 2.5 V
165 BGA
200/6.5
I
2M x 36
GS864436E-166IV
Synchronous Burst MCM
1.8 V or 2.5 V
165 BGA
166/8
I
2M x 36
GS864436E-150IV
Synchronous Burst MCM
1.8 V or 2.5 V
165 BGA
150/8.5
I
2M x 36
GS864436E-133IV
Synchronous Burst MCM
1.8 V or 2.5 V
165 BGA
133/8.5
I
4M x 18
GS864418GE-250V
Synchronous Burst MCM
1.8 V or 2.5 V
RoHS-compliant
165 BGA
250/6.5
C
Notes:
1. Customers requiring delivery in Tape and Reel should add the character “T” to the end of the part number. Example: GS864418E-150IVT.
2. The speed column indicates the cycle frequency (MHz) of the device in Pipeline mode and the latency (ns) in Flow Through mode. Each
device is Pipeline/Flow Through mode-selectable by the user.
3. TA = C = Commercial Temperature Range. TA = I = Industrial Temperature Range.
4.
GSI offers other versions this type of device in many different configurations and with a variety of different features, only some of which are
covered in this data sheet. See the GSI Technology web site (www.gsitechnology.com) for a complete listing of current offerings.
相關(guān)PDF資料
PDF描述
GS8644V18GE-150 4M X 18 CACHE SRAM, 7.5 ns, PBGA165
GS8662S36BD-300I 2M X 36 STANDARD SRAM, 0.45 ns, PBGA165
GS8662S36BGD-300 2M X 36 STANDARD SRAM, 0.45 ns, PBGA165
GS88036T-100T 256K X 36 CACHE SRAM, 12 ns, PQFP100
GS88037CT-250I 256K X 36 CACHE SRAM, 2.3 ns, PQFP100
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
GS864436 制造商:GSI 制造商全稱:GSI Technology 功能描述:4M x 18, 2M x 36, 1M x 72 72Mb S/DCD Sync Burst SRAMs
GS864436B 制造商:GSI 制造商全稱:GSI Technology 功能描述:4M x 18, 2M x 36, 1M x 72 72Mb S/DCD Sync Burst SRAMs
GS864436B-133 制造商:GSI Technology 功能描述:SRAM SYNC QUAD 2.5V/3.3V 72MBIT 2MX36 8.5NS/4NS 119FBGA - Trays
GS864436B-133I 制造商:GSI 制造商全稱:GSI Technology 功能描述:4M x 18, 2M x 36, 1M x 72 72Mb S/DCD Sync Burst SRAMs
GS864436B-133IV 制造商:GSI Technology 功能描述:SRAM SYNC QUAD 2.5V/3.3V 72MBIT 2MX36 8.5NS/4NS 119FPBGA - Trays
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