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參數(shù)資料
| 型號： | GS8642V18E-250 |
| 廠商： | GSI TECHNOLOGY |
| 元件分類： | SRAM |
| 英文描述： | 4M X 18 CACHE SRAM, 6.5 ns, PBGA165 |
| 封裝： | 17 X 15 MM, 1 MM PITCH, FBGA-165 |
| 文件頁數(shù)： | 9/39頁 |
| 文件大?。?/td> | 1168K |
| 代理商： | GS8642V18E-250 |
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GS8642V18(B/E)/GS8642V36(B/E)/GS8642V72(C)
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
Rev: 1.00 9/2004
17/39
2004, GSI Technology
Note:
Permanent damage to the device may occur if the Absolute Maximum Ratings are exceeded. Operation should be restricted to Recommended
Operating Conditions. Exposure to conditions exceeding the Absolute Maximum Ratings, for an extended period of time, may affect reliability of
this component.
Absolute Maximum Ratings
(All voltages reference to VSS)
Symbol
Description
Value
Unit
VDD
Voltage on VDD Pins
–0.5 to 3.6
V
VDDQ
Voltage in VDDQ Pins
–0.5 to 3.6
V
VI/O
Voltage on I/O Pins
–0.5 to VDDQ +0.5 (≤ 3.6 V max.)
V
VIN
Voltage on Other Input Pins
–0.5 to VDD +0.5 (≤ 3.6 V max.)
V
IIN
Input Current on Any Pin
+/–20
mA
IOUT
Output Current on Any I/O Pin
+/–20
mA
PD
Package Power Dissipation
1.5
W
TSTG
Storage Temperature
–55 to 125
oC
TBIAS
Temperature Under Bias
–55 to 125
oC
Power Supply Voltage Ranges
Parameter
Symbol
Min.
Typ.
Max.
Unit
Notes
1.8 V Supply Voltage
VDD1
1.6
1.8
2.0
V
1.8 V VDDQ I/O Supply Voltage
VDDQ1
1.6
1.8
2.0
V
Notes:
1. The part numbers of Industrial Temperature Range versions end the character “I”. Unless otherwise noted, all performance specifica-
tions quoted are evaluated for worst case in the temperature range marked on the device.
2. Input Under/overshoot voltage must be –2 V > Vi < VDDn+2 V not to exceed 3.6 V maximum, with a pulse width not to exceed 20% tKC.
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| GS8642V36GB-300 | 制造商:GSI Technology 功能描述:SRAM SYNC QUAD 1.8V 72MBIT 2MX36 5.5NS/2.3NS 119FBGA - Trays |
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| GS8642V72GC-300 | 制造商:GSI Technology 功能描述:SRAM SYNC OCTAL 1.8V 72MBIT 1MX72 5.5NS/3NS 209FBGA - Trays |
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