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參數(shù)資料
| 型號： | GS8640FZ18T-8IVT |
| 廠商： | GSI TECHNOLOGY |
| 元件分類： | SRAM |
| 英文描述： | 4M X 18 ZBT SRAM, 8 ns, PQFP100 |
| 封裝： | TQFP-100 |
| 文件頁數(shù)： | 5/19頁 |
| 文件大?。?/td> | 456K |
| 代理商： | GS8640FZ18T-8IVT |
GS8640FZ18/36T-xxxV
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
Rev: 1.00a 2/2009
13/19
2007, GSI Technology
AC Test Conditions
Parameter
Conditions
Figure 1
Input high level
VDD – 0.2 V
Input low level
0.2 V
Input slew rate
1 V/ns
Input reference level
VDD/2
Output reference level
VDDQ/2
Output load
Fig. 1
Notes:
1. Include scope and jig capacitance.
2. Test conditions as specified with output loading as shown in Fig. 1
unless otherwise noted.
3. Device is deselected as defined by the Truth Table.
DC Electrical Characteristics
Parameter
Symbol
Test Conditions
Min
Max
Input Leakage Current
(except mode pins)
IIL
VIN = 0 to VDD
–1 uA
1 uA
FT, ZZ Input Current
IIN
VDD VIN 0 V
–100 uA
100 uA
Output Leakage Current
IOL
Output Disable, VOUT = 0 to VDD
–1 uA
1 uA
DC Output Characteristics (1.8 V/2.5 V Version)
Parameter
Symbol
Test Conditions
Min
Max
1.8 V Output High Voltage
VOH1
IOH = –4 mA, VDDQ = 1.7 V
VDDQ – 0.4 V
—
2.5 V Output High Voltage
VOH2
IOH = –8 mA, VDDQ = 2.375 V
1.7 V
—
1.8 V Output Low Voltage
VOL1
IOL = 4 mA
—
0.4 V
2.5 V Output Low Voltage
VOL2
IOL = 8 mA
—
0.4 V
DQ
VDDQ/2
50
30pF*
Output Load 1
* Distributed Test Jig Capacitance
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