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參數資料
| 型號： | GS840E18GB-100T |
| 廠商： | GSI TECHNOLOGY |
| 元件分類： | SRAM |
| 英文描述： | 256K X 18 CACHE SRAM, 12 ns, PBGA119 |
| 封裝： | BGA-119 |
| 文件頁數： | 7/31頁 |
| 文件大?。?/td> | 629K |
| 代理商： | GS840E18GB-100T |
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Rev: 2.05 6/2000
15/31
1999, Giga Semiconductor, Inc.
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com
.
GS840E18/32/36T/B-180/166/150/100
Note:
Permanent damage to the device may occur if the Absolute Maximum Ratings are exceeded. Operation should be restricted to Recommended
Operating Conditions. Exposure to conditions exceeding the Absolute Maximum Ratings, for an extended period of time, may affect reliability of
this component.
Note:
1. Unless otherwise noted, all performance specifications quoted are evaluated for worst case at both 2.75V
≤ VDDQ ≤ 2.375V (i.e. 2.5V I/O)
and 3.6V
≤ VDDQ ≤ 3.135V (i.e. 3.3V I/O) and quoted at whichever condition is worst case.
2. This device features input buffers compatible with both 3.3V and 2.5V I/O drivers.
3. Most speed grades and configurations of this device are offered in both Commercial and Industrial Temperature ranges. The part number of
Industrial Temperature Range versions end the character “I”. Unless otherwise noted, all performance specifications quoted are evaluated
for worst case in the temperature range marked on the device.
4. Input Under/overshoot voltage must be -2V > Vi < VDD+2V with a pulse width not to exceed 20% tKC.
Absolute Maximum Ratings
(All voltages reference to VSS)
Symbol
Description
Value
Unit
VDD
Voltage on VDD Pins
-0.5 to 4.6
V
VDDQ
Voltage in VDDQ Pins
-0.5 to VDD
V
VCK
Voltage on Clock Input Pin
-0.5 to 6
V
VI/O
Voltage on I/O Pins
-0.5 to VDDQ+0.5 (≤ 4.6 V max.)
V
VIN
Voltage on Other Input Pins
-0.5 to VDD+0.5 (≤ 4.6 V max.)
V
IIN
Input Current on Any Pin
+/- 20
mA
IOUT
Output Current on Any I/O Pin
+/- 20
mA
PD
Package Power Dissipation
1.5
W
TSTG
Storage Temperature
-55 to 125
oC
TBIAS
Temperature Under Bias
-55 to 125
oC
Recommended Operating Conditions
Parameter
Symbol
Min.
Typ.
Max.
Unit
Notes
Supply Voltage
VDD
3.135
3.3
3.6
V
I/O Supply Voltage
VDDQ
2.375
2.5
VDD
V
1
Input High Voltage
VIH
1.7
---
VDD+0.3
V
2
Input Low Voltage
VIL
-0.3
---
0.8
V
2
Ambient Temperature (Commercial Range Versions)
TA
0
25
70
°C
3
Ambient Temperature (Industrial Range Versions)
TA
-40
25
85
°C
3
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相關代理商/技術參數 |
參數描述 |
|---|---|
| GS840E18T | 制造商:GSI 制造商全稱:GSI Technology 功能描述:256K x 18, 128K x 32, 128K x 36 4Mb Sync Burst SRAMs |
| GS840E18T-100 | 制造商:GSI 制造商全稱:GSI Technology 功能描述:256K x 18, 128K x 32, 128K x 36 4Mb Sync Burst SRAMs |
| GS840E18T-100I | 制造商:GSI 制造商全稱:GSI Technology 功能描述:256K x 18, 128K x 32, 128K x 36 4Mb Sync Burst SRAMs |
| GS840E18T-150 | 制造商:GSI 制造商全稱:GSI Technology 功能描述:256K x 18, 128K x 32, 128K x 36 4Mb Sync Burst SRAMs |
| GS840E18T-150I | 制造商:GSI 制造商全稱:GSI Technology 功能描述:256K x 18, 128K x 32, 128K x 36 4Mb Sync Burst SRAMs |
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