參數(shù)資料
型號(hào)： GS8342TT06BGD-500T
廠商： GSI TECHNOLOGY
元件分類： SRAM
英文描述： 4M X 8 DDR SRAM, 0.45 ns, PBGA165
封裝： 13 X 15 MM, 1 MM PITCH, ROHS COMPLIANT, FPBGA-165
文件頁(yè)數(shù)： 18/30頁(yè)
文件大小： 267K
代理商： GS8342TT06BGD-500T
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
Rev: 1.00 5/2011
25/30
2011, GSI Technology
Preliminary
GS8342TT06/11/20/38BD-550/500/450/400/350
JTAG TAP Instruction Set Summary
Instruction
Code
Description
Notes
EXTEST
000
Places the Boundary Scan Register between TDI and TDO.
1
IDCODE
001
Preloads ID Register and places it between TDI and TDO.
1, 2
SAMPLE-Z
010
Captures I/O ring contents. Places the Boundary Scan Register between TDI and TDO.
Forces all RAM output drivers to High-Z.
1
GSI
011
GSI Private Instruction.
1
SAMPLE/PRELOAD
100
Captures I/O ring contents. Places the Boundary Scan Register between TDI and TDO.
1
GSI
101
GSI Private Instruction.
1
GSI
110
GSI Private Instruction.
1
BYPASS
111
Places Bypass Register between TDI and TDO.
1
Notes:
1. Instruction codes expressed in binary, MSB on left, LSB on right.
2. Default instruction automatically loaded at power-up and in test-logic-reset state.
JTAG Port Recommended Operating Conditions and DC Characteristics
Parameter
Symbol
Min.
Max.
Unit
Notes
Test Port Input Low Voltage
VILJ
–
0.3
0.3 * VDD
V1
Test Port Input High Voltage
VIHJ
0.7 * VDD
VDD +0.3
V1
TMS, TCK and TDI Input Leakage Current
IINHJ
–
300
1
uA
2
TMS, TCK and TDI Input Leakage Current
IINLJ
–
1
100
uA
3
TDO Output Leakage Current
IOLJ
–
11
uA
4
Test Port Output High Voltage
VOHJ
VDD – 0.2
—
V5, 6
Test Port Output Low Voltage
VOLJ
—
0.2
V
5, 7
Test Port Output CMOS High
VOHJC
VDD – 0.1
—
V5, 8
Test Port Output CMOS Low
VOLJC
—
0.1
V
5, 9
Notes:
1. Input Under/overshoot voltage must be –1 V < Vi < VDDn +1 V not to exceed 2.9 V maximum, with a pulse width not to exceed 20% tTKC.
2. VILJ VIN VDDn
3. 0 V
V
IN V
ILJn
4. Output Disable, VOUT = 0 to VDDn
5. The TDO output driver is served by the VDD supply.
6. IOHJ = –2 mA
7. IOLJ = + 2 mA
8. IOHJC = –100 uA
9. IOLJC = +100 uA
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