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參數(shù)資料
| 型號： | GS82032AGQ-133IT |
| 廠商： | GSI TECHNOLOGY |
| 元件分類： | SRAM |
| 英文描述： | 64K X 32 CACHE SRAM, 10 ns, PQFP100 |
| 封裝： | QFP-100 |
| 文件頁數(shù)： | 4/23頁 |
| 文件大小： | 677K |
| 代理商： | GS82032AGQ-133IT |
Rev: 1.09 7/2002
12/23
2000, Giga Semiconductor, Inc.
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
GS82032AT/Q-180/166/133/100
Operating Currents
Parameter
Test Conditions
Symbol
-180
-166
-133
-100
Unit
0
to
70°C
–40 to
85°C
0
to
70°C
–40 to
85°C
0
to
70°C
–40 to
85°C
0
to
70°C
–40 to
85°C
Operating
Current
Device Selected;
All other inputs
≥VIH or ≤ VIL
Output open
IDD
Pipeline
155
160
140
145
115
120
90
95
mA
IDD
Flow
Through
100
105
90
95
80
85
65
70
mA
Standby
Current
ZZ
≥ VDD – 0.2 V
ISB
Flow
Through
10
15
10
15
10
15
10
15
mA
Deselect
Current
Device Deselected;
All other inputs
≥ VIH or ≤ VIL
IDD
Pipeline
35
40
30
35
30
35
25
30
mA
IDD
Flow
Through
25
30
25
30
20
25
20
25
mA
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PDF描述 |
|---|---|
| GS8321EV18GE-133T | 2M X 18 CACHE SRAM, 8.5 ns, PBGA165 |
| GS8321ZV36E-150T | 1M X 36 ZBT SRAM, 8.5 ns, PBGA165 |
| GS832236AB-300T | 1M X 36 CACHE SRAM, PBGA119 |
| GS832472GC-150I | 512K X 72 CACHE SRAM, 10 ns, PBGA209 |
| GS832472GC-250T | 512K X 72 CACHE SRAM, 6 ns, PBGA209 |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| GS82032AGQ-150I | 制造商:GSI Technology 功能描述:2MB (64K X 32) SYNCH BURST SCD - Trays |
| GS82032AGQ-166 | 制造商:GSI Technology 功能描述:2MB (64K X 32) SYNCH BURST SCD - Trays |
| GS82032AGQ-166I | 制造商:GSI Technology 功能描述:2MB (64K X 32) SYNCH BURST SCD - Trays |
| GS82032AGQ-4 | 制造商:GSI Technology 功能描述:2MB (64K X 32) SYNCH BURST SCD - Trays |
| GS82032AGQ-4I | 制造商:GSI Technology 功能描述:2MB (64K X 32) SYNCH BURST SCD - Trays |
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