- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄173638 > GS82032AGQ-133IT (GSI TECHNOLOGY) 64K X 32 CACHE SRAM, 10 ns, PQFP100 PDF資料下載
參數(shù)資料
| 型號： | GS82032AGQ-133IT |
| 廠商： | GSI TECHNOLOGY |
| 元件分類： | SRAM |
| 英文描述： | 64K X 32 CACHE SRAM, 10 ns, PQFP100 |
| 封裝： | QFP-100 |
| 文件頁數(shù)： | 20/23頁 |
| 文件大小： | 677K |
| 代理商： | GS82032AGQ-133IT |
Rev: 1.09 7/2002
6/23
2000, Giga Semiconductor, Inc.
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
GS82032AT/Q-180/166/133/100
Synchronous Truth Table
Operation
Address
Used
State
Diagram
Key5
E1
E2
ADSP ADSC
ADV
W3
DQ4
Deselect Cycle, Power Down
None
X
H
X
L
X
High-Z
Deselect Cycle, Power Down
None
X
L
F
L
X
High-Z
Deselect Cycle, Power Down
None
X
L
F
H
L
X
High-Z
Read Cycle, Begin Burst
External
R
L
T
L
X
Q
Read Cycle, Begin Burst
External
R
L
T
H
L
X
F
Q
Write Cycle, Begin Burst
External
W
L
T
H
L
X
T
D
Read Cycle, Continue Burst
Next
CR
X
H
L
F
Q
Read Cycle, Continue Burst
Next
CR
H
X
H
L
F
Q
Write Cycle, Continue Burst
Next
CW
X
H
L
T
D
Write Cycle, Continue Burst
Next
CW
H
X
H
L
T
D
Read Cycle, Suspend Burst
Current
X
H
F
Q
Read Cycle, Suspend Burst
Current
H
X
H
F
Q
Write Cycle, Suspend Burst
Current
X
H
T
D
Write Cycle, Suspend Burst
Current
H
X
H
T
D
Notes:
1. X = Don’t Care, H = High, L = Low
2. E = T (True) if E2 = 1 and E3 = 0; E = F (False) if E2 = 0 or E3 = 1
3. W = T (True) and F (False) is defined in the Byte Write Truth Table preceding
4. G is an asynchronous input. G can be driven high at any time to disable active output drivers. G low can only enable active drivers (shown
as “Q” in the Truth Table above).
5. All input combinations shown above are tested and supported. Input combinations shown in gray boxes need not be used to accomplish
basic synchronous or synchronous burst operations and may be avoided for simplicity.
6. Tying ADSP high and ADSC low allows simple non-burst synchronous operations. See BOLD items above.
7. Tying ADSP high and ADV low while using ADSC to load new addresses allows simple burst operations. See ITALIC items above.
相關PDF資料 |
PDF描述 |
|---|---|
| GS8321EV18GE-133T | 2M X 18 CACHE SRAM, 8.5 ns, PBGA165 |
| GS8321ZV36E-150T | 1M X 36 ZBT SRAM, 8.5 ns, PBGA165 |
| GS832236AB-300T | 1M X 36 CACHE SRAM, PBGA119 |
| GS832472GC-150I | 512K X 72 CACHE SRAM, 10 ns, PBGA209 |
| GS832472GC-250T | 512K X 72 CACHE SRAM, 6 ns, PBGA209 |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| GS82032AGQ-150I | 制造商:GSI Technology 功能描述:2MB (64K X 32) SYNCH BURST SCD - Trays |
| GS82032AGQ-166 | 制造商:GSI Technology 功能描述:2MB (64K X 32) SYNCH BURST SCD - Trays |
| GS82032AGQ-166I | 制造商:GSI Technology 功能描述:2MB (64K X 32) SYNCH BURST SCD - Trays |
| GS82032AGQ-4 | 制造商:GSI Technology 功能描述:2MB (64K X 32) SYNCH BURST SCD - Trays |
| GS82032AGQ-4I | 制造商:GSI Technology 功能描述:2MB (64K X 32) SYNCH BURST SCD - Trays |
發(fā)布緊急采購，3分鐘左右您將得到回復。