參數(shù)資料
型號(hào): GS8162Z72AC-300
廠商: GSI TECHNOLOGY
元件分類: SRAM
英文描述: 256K X 72 ZBT SRAM, 5 ns, PBGA209
封裝: 14 X 22 MM, 1 MM PITCH, BGA-209
文件頁數(shù): 22/36頁
文件大?。?/td> 889K
代理商: GS8162Z72AC-300
Rev: 1.03a 5/2003
29/36
2001, Giga Semiconductor, Inc.
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
GS8162Z18A(B/D)/GS8162Z36A(B/D)/GS8162Z72A(C)
Preliminary
JTAG Port Recommended Operating Conditions and DC Characteristics
Parameter
Symbol
Min.
Max.
Unit Notes
3.3 V Test Port Input High Voltage
VIHJ3
2.0
VDD3 +0.3
V1
3.3 V Test Port Input Low Voltage
VILJ3
–0.3
0.8
V
1
2.5 V Test Port Input High Voltage
VIHJ2
0.6 * VDD2
VDD2 +0.3
V1
2.5 V Test Port Input Low Voltage
VILJ2
–0.3
0.3 * VDD2
V1
TMS, TCK and TDI Input Leakage Current
IINHJ
–300
1
uA
2
TMS, TCK and TDI Input Leakage Current
IINLJ
–1
100
uA
3
TDO Output Leakage Current
IOLJ
–11
uA
4
Test Port Output High Voltage
VOHJ
1.7
V5, 6
Test Port Output Low Voltage
VOLJ
0.4
V
5, 7
Test Port Output CMOS High
VOHJC
VDDQ – 100 mV
V5, 8
Test Port Output CMOS Low
VOLJC
100 mV
V
5, 9
Notes:
1. Input Under/overshoot voltage must be –2 V > Vi < VDDn +2 V not to exceed 4.6 V maximum, with a pulse width not to exceed 20% tTKC.
2. VILJ ≤ VIN ≤ VDDn
3. 0 V
≤ VIN ≤ VILJn
4. Output Disable, VOUT = 0 to VDDn
5. The TDO output driver is served by the VDDQ supply.
6. IOHJ = –4 mA
7. IOLJ = + 4 mA
8. IOHJC = –100 uA
9. IOHJC = +100 uA
Notes:
1. Include scope and jig capacitance.
2. Test conditions as as shown unless otherwise noted.
JTAG Port AC Test Conditions
Parameter
Conditions
Input high level
VDD – 0.2 V
Input low level
0.2 V
Input slew rate
1 V/ns
Input reference level
VDDQ/2
Output reference level
VDDQ/2
DQ
VDDQ/2
50
30pF*
JTAG Port AC Test Load
* Distributed Test Jig Capacitance
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