參數(shù)資料
型號(hào)： GS816236D-150IT
廠商： GSI TECHNOLOGY
元件分類(lèi)： SRAM
英文描述： 512K X 36 CACHE SRAM, 7.5 ns, PBGA165
封裝： 13 X 15 MM, 1 MM PITCH, FBGA-165
文件頁(yè)數(shù)： 30/38頁(yè)
文件大?。?/td> 1609K
代理商： GS816236D-150IT
GS816218(B/D)/GS816236(B/D)
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
Rev: 2.18 11/2005
36/38
1999, GSI Technology
18Mb Sync SRAM Datasheet Revision History
DS/DateRev. Code: Old;
New
Types of Changes
Format or Content
Page;Revisions;Reason
GS816218B-150IB 1.00 9/
1999A;GS816218B-150IB
2.00 1/1999B
Content
Converted from 0.25u 3.3V process to 0.18u 2.5V process.
Master File Rev B
Added x72 Pinout.
Added GSI Logo.
GS816218B 2.01 1/
2000C;GS816218 B 2.02 1/
2000D
Changed BGA package drawing for 209 pin package.
GS18/362.0 1/2000DGS18/
362.03 2/2000E
Front page; Features - changed 2.5V I/O supply to 2.5V
or3.3V I/O supply; Core and Interface voltages - Changed
paragraph to include information for 3.3V;Completeness
Absolute Maximum Ratings; Changed VDDQ - Value: From: -
.05 to VDD : to : -.05 to 3.6; Completeness.
Recommended Operating Conditions;Changed: I/O Supply
Voltage- Max. from VDD to 3.6; Input High Voltage- Max. from
VDD +0.3 to 3.6; Same page - took out Note 1;Completeness
Electrical Characteristics - Added second Output High Voltage
line to table; completeness.
Note: There was not a Rev 2.02 for the 8160Z or the 8161Z.
GS18/362.03 2/2000E;
816218_r2_04
Content
Updated pad out and pin description table (7D changed from
NC to GW)
816218_r2_04;
816218_r2_05
Content
Updated BGA pin description table to comply with JEDEC
standards
816218_r2_05;
816218_r2_06
Content
Changed the value of ZZ recovery in the AC Electrical
Characteristics table on page 19 from 20 ns to 100 ns
816218_r2_06;
816218_r2_07
Content/Format
Added 225 MHz speed bin
Updated numbers in page 1 table, AC Characteristics table,
and Operating Currents table
Updated format to comply with Technical Publications
standards
816218_r2_07;
816218_r2_08
Content
Changed VSSQ references to VSS
Changed K4 and K8 in 209-bump BGA to NC
Updated Capitance table—removed Input row and changed
Output row to I/O
816218_r2_08;
816218_r2_09
Content
Updated numbers for Clock to Output Valid (PL) and Clock to
Output Valid (FT) for 166 MHz and 133 MHz on AC Electrical
Characteristics table
816218_r2_09;
816218_r2_10
Content
Updated Features list on page 1
Completely reworked table on page 1
Updated Mode Pin Functions table on page 9
相關(guān)PDF資料
PDF描述
GS816236B-133IT 512K X 36 CACHE SRAM, 8.5 ns, PBGA119
GS8162Z72AC-300 256K X 72 ZBT SRAM, 5 ns, PBGA209
GS8162ZV36BD-200IT 512K X 36 ZBT SRAM, 6.5 ns, PBGA165
GS8170DW72AC-250IT 256K X 72 STANDARD SRAM, 2.1 ns, PBGA209
GS8170DW72AGC-300IT 256K X 72 STANDARD SRAM, 1.8 ns, PBGA209
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
GS816236D-166I 制造商:GSI Technology 功能描述:512K X 36 CACHE SRAM, 7 ns, PBGA165
GS816236DB-150 制造商:GSI Technology 功能描述:119 BGA - Bulk
GS816236DB-150V 制造商:GSI Technology 功能描述:119 BGA - Bulk
GS816236DB-200 制造商:GSI Technology 功能描述:119 BGA - Bulk
GS816236DB-200I 制造商:GSI Technology 功能描述:119 BGA - Bulk
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