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| 型號(hào)： | GS8161Z18DT-250IV |
| 廠商： | GSI TECHNOLOGY |
| 元件分類： | SRAM |
| 英文描述： | 1M X 18 ZBT SRAM, 5.5 ns, PQFP100 |
| 封裝： | ROHS COMPLIANT, TQFP-100 |
| 文件頁數(shù)： | 9/35頁 |
| 文件大小： | 488K |
| 代理商： | GS8161Z18DT-250IV |
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GS8161ZxxD(GT/D)-xxxV
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
Rev: 1.00 6/2011
17/35
2011, GSI Technology
Preliminary
Note:
Permanent damage to the device may occur if the Absolute Maximum Ratings are exceeded. Operation should be restricted to Recommended
Operating Conditions. Exposure to conditions exceeding the Absolute Maximum Ratings, for an extended period of time, may affect reliability of
this component.
Absolute Maximum Ratings
(All voltages reference to VSS)
Symbol
Description
Value
Unit
VDD
Voltage on VDD Pins
–
0.5 to 4.6
V
VDDQ
Voltage on VDDQ Pins
–
0.5 to VDD
V
VI/O
Voltage on I/O Pins
–
0.5 to VDDQ +0.5 ( 4.6 V max.)
V
VIN
Voltage on Other Input Pins
–
0.5 to VDD +0.5 ( 4.6 V max.)
V
IIN
Input Current on Any Pin
+/–20
mA
IOUT
Output Current on Any I/O Pin
+/–20
mA
PD
Package Power Dissipation
1.5
W
TSTG
Storage Temperature
–
55 to 125
oC
TBIAS
Temperature Under Bias
–
55 to 125
oC
Power Supply Voltage Ranges (1.8 V/2.5 V Version)
Parameter
Symbol
Min.
Typ.
Max.
Unit
1.8 V Supply Voltage
VDD1
1.7
1.8
2.0
V
2.5 V Supply Voltage
VDD2
2.3
2.5
2.7
V
1.8 V VDDQ I/O Supply Voltage
VDDQ1
1.7
1.8
VDD
V
2.5 V VDDQ I/O Supply Voltage
VDDQ2
2.3
2.5
VDD
V
VDDQ2 & VDDQ1 Range Logic Levels
Parameter
Symbol
Min.
Typ.
Max.
Unit
VDD Input High Voltage
VIH
0.6*VDD
—
VDD + 0.3
V
VDD Input Low Voltage
VIL
–
0.3
—
0.3*VDD
V
Note:
Unless otherwise noted, all performance specifications quoted are evaluated for worst case in the temperature range marked on the device.
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