參數(shù)資料
型號： GS8161Z18DT-250IV
廠商： GSI TECHNOLOGY
元件分類： SRAM
英文描述： 1M X 18 ZBT SRAM, 5.5 ns, PQFP100
封裝： ROHS COMPLIANT, TQFP-100
文件頁數(shù)： 26/35頁
文件大?。?/td> 488K
代理商： GS8161Z18DT-250IV
GS8161ZxxD(GT/D)-xxxV
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
Rev: 1.00 6/2011
32/35
2011, GSI Technology
Preliminary
Ordering Information for GSI Synchronous Burst RAMs
Org
Part Number1
Type
Voltage
Option
Package
Speed2
(MHz/ns)
TJ3
1M x 18
GS8161Z18DT-333V
NBT
1.8 V or 2.5 V
TQFP
333/5.0
C
1M x 18
GS8161Z18DT-250V
NBT
1.8 V or 2.5 V
TQFP
250/5.5
C
1M x 18
GS8161Z18DT-200V
NBT
1.8 V or 2.5 V
TQFP
200/6.5
C
1M x 18
GS8161Z18DT-150V
NBT
1.8 V or 2.5 V
TQFP
150/7.5
C
512K x 36
GS8161Z36DT-333V
NBT
1.8 V or 2.5 V
TQFP
333/5.0
C
512K x 36
GS8161Z36DT-250V
NBT
1.8 V or 2.5 V
TQFP
250/5.5
C
512K x 36
GS8161Z36DT-200V
NBT
1.8 V or 2.5 V
TQFP
200/6.5
C
512K x 36
GS8161Z36DT-150V
NBT
1.8 V or 2.5 V
TQFP
150/7.5
C
1M x 18
GS8161Z18DT-333IV
NBT
1.8 V or 2.5 V
TQFP
333/5.0
I
1M x 18
GS8161Z18DT-250IV
NBT
1.8 V or 2.5 V
TQFP
250/5.5
I
1M x 18
GS8161Z18DT-200IV
NBT
1.8 V or 2.5 V
TQFP
200/6.5
I
1M x 18
GS8161Z18DT-150IV
NBT
1.8 V or 2.5 V
TQFP
150/7.5
I
512K x 36
GS8161Z36DT-333IV
NBT
1.8 V or 2.5 V
TQFP
333/5.0
I
512K x 36
GS8161Z36DT-250IV
NBT
1.8 V or 2.5 V
TQFP
250/5.5
I
512K x 36
GS8161Z36DT-200IV
NBT
1.8 V or 2.5 V
TQFP
200/6.5
I
512K x 36
GS8161Z36DT-150IV
NBT
1.8 V or 2.5 V
TQFP
150/7.5
I
1M x 18
GS8161Z18DD-333V
NBT
1.8 V or 2.5 V
165 BGA
333/5.0
C
1M x 18
GS8161Z18DD-250V
NBT
1.8 V or 2.5 V
165 BGA
250/5.5
C
1M x 18
GS8161Z18DD-200V
NBT
1.8 V or 2.5 V
165 BGA
200/6.5
C
1M x 18
GS8161Z18DD-150V
NBT
1.8 V or 2.5 V
165 BGA
150/7.5
C
1M x 32
GS8161Z32DD-333V
NBT
1.8 V or 2.5 V
165 BGA
333/5.0
C
1M x 32
GS8161Z32DD-250V
NBT
1.8 V or 2.5 V
165 BGA
250/5.5
C
1M x 32
GS8161Z32DD-200V
NBT
1.8 V or 2.5 V
165 BGA
200/6.5
C
1M x 32
GS8161Z32DD-150V
NBT
1.8 V or 2.5 V
165 BGA
150/7.5
C
512K x 36
GS8161Z36DD-333V
NBT
1.8 V or 2.5 V
165 BGA
333/5.0
C
512K x 36
GS8161Z36DD-250V
NBT
1.8 V or 2.5 V
165 BGA
250/5.5
C
512K x 36
GS8161Z36DD-200V
NBT
1.8 V or 2.5 V
165 BGA
200/6.5
C
512K x 36
GS8161Z36DD-150V
NBT
1.8 V or 2.5 V
165 BGA
150/7.5
C
1M x 18
GS8161Z18DD-333IV
NBT
1.8 V or 2.5 V
165 BGA
333/5.0
I
1M x 18
GS8161Z18DD-250IV
NBT
1.8 V or 2.5 V
165 BGA
250/5.5
I
Notes:
1. Customers requiring delivery in Tape and Reel should add the character “T” to the end of the part number.
Example: GS8161Z18DGD-150IVT.
2. The speed column indicates the cycle frequency (MHz) of the device in Pipeline mode and the latency (ns) in Flow Through mode. Each
device is Pipeline/Flow Through mode-selectable by the user.
3. C = Commercial Temperature Range. I = Industrial Temperature Range.
4. GSI offers other versions this type of device in many different configurations and with a variety of different features, only some of which are
covered in this data sheet. See the GSI Technology web site (www.gsitechnology.com) for a complete listing of current offerings.
相關(guān)PDF資料
PDF描述
GS8161Z18DT-200T 1M X 18 ZBT SRAM, 6.5 ns, PQFP100
GS816218 1M x 18, 512K x 36 18Mb S/DCD Sync Burst SRAMs
GS816236D-150IT 512K X 36 CACHE SRAM, 7.5 ns, PBGA165
GS816236B-133IT 512K X 36 CACHE SRAM, 8.5 ns, PBGA119
GS8162Z72AC-300 256K X 72 ZBT SRAM, 5 ns, PBGA209
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
GS8161Z18T-133 制造商:未知廠家 制造商全稱:未知廠家 功能描述:18Mb Pipelined and Flow Through Synchronous NBT SRAM
GS8161Z18T-133I 制造商:GSI 制造商全稱:GSI Technology 功能描述:18Mb Pipelined and Flow Through Synchronous NBT SRAM
GS8161Z18T-133IT 制造商:GSI 制造商全稱:GSI Technology 功能描述:18Mb Pipelined and Flow Through Synchronous NBT SRAM
GS8161Z18T-133T 制造商:GSI 制造商全稱:GSI Technology 功能描述:18Mb Pipelined and Flow Through Synchronous NBT SRAM
GS8161Z18T-150 制造商:GSI 制造商全稱:GSI Technology 功能描述:18Mb Pipelined and Flow Through Synchronous NBT SRAM
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