參數(shù)資料
型號(hào): GS8161Z18DT-250IV
廠商: GSI TECHNOLOGY
元件分類: SRAM
英文描述: 1M X 18 ZBT SRAM, 5.5 ns, PQFP100
封裝: ROHS COMPLIANT, TQFP-100
文件頁(yè)數(shù): 13/35頁(yè)
文件大?。?/td> 488K
代理商: GS8161Z18DT-250IV
GS8161ZxxD(GT/D)-xxxV
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
Rev: 1.00 6/2011
20/35
2011, GSI Technology
Preliminary
Notes:
1. IDD and IDDQ apply to any combination of VDD1, VDD2, VDDQ1, and VDDQ2 operation.
2. All parameters listed are worst case scenario.
Operating Currents
Parameter
Test Conditions
Mode
Symbol
-333
-250
-200
-150
Un
it
0
to
70°C
40
to
85°C
0
to
70°C
40
to
85°C
0
to
70°C
40
to
85°C
0
to
70°C
40
to
85°C
Operating
Current
Device Selected;
All other inputs
VIH or VIL
Output open
(x32/
x36)
Pipeline
IDD
IDDQ
TBD
mA
Flow
Through
IDD
IDDQ
TBD
mA
(x18)
Pipeline
IDD
IDDQ
TBD
mA
Flow
Through
IDD
IDDQ
TBD
mA
Standby
Current
ZZ
VDD – 0.2 V —
Pipeline
ISB
TBD
mA
Flow
Through
ISB
TBD
mA
Deselect
Current
Device Deselected;
All other inputs
VIH or VIL
Pipeline
IDD
TBD
mA
Flow
Through
IDD
TBD
mA
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