參數(shù)資料
型號(hào)： GS8161Z18DT-250IV
廠商： GSI TECHNOLOGY
元件分類(lèi)： SRAM
英文描述： 1M X 18 ZBT SRAM, 5.5 ns, PQFP100
封裝： ROHS COMPLIANT, TQFP-100
文件頁(yè)數(shù)： 7/35頁(yè)
文件大?。?/td> 488K
代理商： GS8161Z18DT-250IV
GS8161ZxxD(GT/D)-xxxV
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
Rev: 1.00 6/2011
15/35
2011, GSI Technology
Preliminary
Burst Cycles
Although NBT RAMs are designed to sustain 100% bus bandwidth by eliminating turnaround cycle when there is transition from
read to write, multiple back-to-back reads or writes may also be performed. NBT SRAMs provide an on-chip burst address
generator that can be utilized, if desired, to further simplify burst read or write implementations. The ADV control pin, when
driven high, commands the SRAM to advance the internal address counter and use the counter generated address to read or write
the SRAM. The starting address for the first cycle in a burst cycle series is loaded into the SRAM by driving the ADV pin low, into
Load mode.
Burst Order
The burst address counter wraps around to its initial state after four addresses (the loaded address and three more) have been
accessed. The burst sequence is determined by the state of the Linear Burst Order pin (LBO). When this pin is low, a linear burst
sequence is selected. When the RAM is installed with the LBO pin tied high, Interleaved burst sequence is selected. See the tables
below for details.
Note:
There is a pull-up device on the FT pin and a pull-down device on the ZZ pin , so this input pin can be unconnected and the chip will operate in
the default states as specified in the above tables.
Burst Counter Sequences
Mode Pin Functions
Mode Name
Pin Name
State
Function
Burst Order Control
LBO
L
Linear Burst
H
Interleaved Burst
Output Register Control
FT
L
Flow Through
H or NC
Pipeline
Power Down Control
ZZ
L or NC
Active
H
Standby, IDD = ISB
Note:
The burst counter wraps to initial state on the 5th clock.
Note:
The burst counter wraps to initial state on the 5th clock.
Linear Burst Sequence
A[1:0]
1st address
00
01
10
11
2nd address
01
10
11
00
3rd address
10
11
00
01
4th address
11
00
01
10
Interleaved Burst Sequence
A[1:0]
1st address
00
01
10
11
2nd address
01
00
11
10
3rd address
10
11
00
01
4th address
11
10
01
00
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
GS8161Z18T-133 制造商:未知廠家 制造商全稱(chēng):未知廠家 功能描述:18Mb Pipelined and Flow Through Synchronous NBT SRAM
GS8161Z18T-133I 制造商:GSI 制造商全稱(chēng):GSI Technology 功能描述:18Mb Pipelined and Flow Through Synchronous NBT SRAM
GS8161Z18T-133IT 制造商:GSI 制造商全稱(chēng):GSI Technology 功能描述:18Mb Pipelined and Flow Through Synchronous NBT SRAM
GS8161Z18T-133T 制造商:GSI 制造商全稱(chēng):GSI Technology 功能描述:18Mb Pipelined and Flow Through Synchronous NBT SRAM
GS8161Z18T-150 制造商:GSI 制造商全稱(chēng):GSI Technology 功能描述:18Mb Pipelined and Flow Through Synchronous NBT SRAM
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