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參數(shù)資料
| 型號(hào)： | GS81302T110E-450T |
| 廠商： | GSI TECHNOLOGY |
| 元件分類： | SRAM |
| 英文描述： | 16M X 9 DDR SRAM, 0.37 ns, PBGA165 |
| 封裝： | 15 X 17 MM, 1 MM PITCH, FPBGA-165 |
| 文件頁(yè)數(shù)： | 10/31頁(yè) |
| 文件大?。?/td> | 1202K |
| 代理商： | GS81302T110E-450T |
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Operating
Currents
Parameter
Symbol
Test
Conditions
-450
-400
-350
-333
-300
No
te
s
0°
to
70°C
–
40°
to
85°C
0°
to
70
°C
–
40°
to
85°C
0°
to
70°C
–
40°
to
85°C
0°
to
70°C
–40°
to
85°C
0°
to
70°C
–
40°
to
85°C
O
perating
Current
(x36):
DDR
I DD
V
DD
=
Max,
I OUT
=
0
mA
Cycle
T
ime
≥
t KH
KH
Min
1190
mA
12
00
m
A
995
mA
10
05
m
A
895
mA
90
5mA
850
m
A
860
mA
780
mA
79
0m
A
2,
3
O
perating
Current
(x18):
DDR
I DD
V
DD
=
Max,
I OUT
=
0
mA
Cycle
T
ime
≥
t KH
KH
Min
10
00
m
A
10
m
A
895
mA
90
5mA
800
mA
81
0mA
755
m
A
765
mA
690
mA
70
0m
A
2,
3
Ope
ratin
gCurren
t(x9):
DDR
I DD
V
DD
=
Max,
I OUT
=
0
mA
Cycle
T
ime
≥
t KH
KH
Min
10
00
m
A
10
m
A
895
mA
90
5mA
800
mA
81
0mA
755
m
A
765
mA
690
mA
70
0m
A
2,
3
Ope
ratin
gCurren
t(x8):
DDR
I DD
V
DD
=
Max,
I OUT
=
0
mA
Cycle
T
ime
≥
t KH
KH
Min
10
00
m
A
10
m
A
895
mA
90
5mA
800
mA
81
0mA
755
m
A
765
mA
690
mA
70
0m
A
2,
3
Stand
by
Cu
rre
nt
(NOP):
DDR
I SB
1
De
vic
ed
ese
lec
ted,
IOUT
=
0mA,
f=
Max,
All
In
puts
≤
0.2
V
or
≥
V
DD
–0
.2
V
30
5m
A
31
5m
A
290
mA
30
0mA
275
mA
28
5mA
270
m
A
280
mA
260
mA
27
0m
A
2,
4
Notes:
1.
Power
measured
wit
houtput
pin
sfloating.
2.
Minimum
cycle,
I OUT
=
0
mA
3.
Operating
current
is
calcu
lated
with
5
0%
read
cycles
and
5
0%
write
cycles.
4.
Standby
Current
is
only
after
all
pending
read
and
write
burst
operations
are
complete
d.
GS81302T7/10/19/37E-450/400/350/333/300
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
Rev: 1.03 4/2011
18/31
2011, GSI Technology
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