參數(shù)資料
型號： GS81302T10E-350I
廠商： GSI TECHNOLOGY
元件分類： SRAM
英文描述： 16M X 9 DDR SRAM, 0.45 ns, PBGA165
封裝： 15 X 17 MM, 1 MM PITCH, FPBGA-165
文件頁數(shù)： 22/31頁
文件大?。?/td> 1202K
代理商： GS81302T10E-350I
GS81302T07/10/19/37E-450/400/350/333/300
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
Rev: 1.03 4/2011
29/31
2011, GSI Technology
Ordering Information—GSI SigmaDDR-II+ SRAM
Org
Part Number1
Type
Package
Speed
(MHz)
TJ2
16M x 8
GS81302T107E-450
SigmaDDR-II+ B2 SRAM
165-bump BGA
400
C
16M x 8
GS81302T107E-400
SigmaDDR-II+ B2 SRAM
165-bump BGA
400
C
16M x 8
GS81302T07E-350
SigmaDDR-II+ B2 SRAM
165-bump BGA
350
C
16M x 8
GS81302T07E-333
SigmaDDR-II+ B2 SRAM
165-bump BGA
333
C
16M x 8
GS81302T07E-300
SigmaDDR-II+ B2 SRAM
165-bump BGA
300
C
16M x 8
GS81302T07E-450I
SigmaDDR-II+ B2 SRAM
165-bump BGA
400
I
16M x 8
GS81302T07E-400I
SigmaDDR-II+ B2 SRAM
165-bump BGA
400
I
16M x 8
GS81302T07E-350I
SigmaDDR-II+ B2 SRAM
165-bump BGA
350
I
16M x 8
GS81302T07E-333I
SigmaDDR-II+ B2 SRAM
165-bump BGA
333
I
16M x 8
GS81302T07E-300I
SigmaDDR-II+ B2 SRAM
165-bump BGA
300
I
16M x 8
GS81302T07GE-450
SigmaDDR-II+ B2 SRAM
RoHS-compliant 165-bump BGA
400
C
16M x 8
GS81302T07GE-400
SigmaDDR-II+ B2 SRAM
RoHS-compliant 165-bump BGA
400
C
16M x 8
GS81302T07GE-350
SigmaDDR-II+ B2 SRAM
RoHS-compliant 165-bump BGA
350
C
16M x 8
GS81302T07GE-333
SigmaDDR-II+ B2 SRAM
RoHS-compliant 165-bump BGA
333
C
16M x 8
GS81302T07GE-300
SigmaDDR-II+ B2 SRAM
RoHS-compliant 165-bump BGA
300
C
16M x 8
GS81302T07GE-450I
SigmaDDR-II+ B2 SRAM
RoHS-compliant 165-bump BGA
400
I
16M x 8
GS81302T07GE-400I
SigmaDDR-II+ B2 SRAM
RoHS-compliant 165-bump BGA
400
I
16M x 8
GS81302T07GE-350I
SigmaDDR-II+ B2 SRAM
RoHS-compliant 165-bump BGA
350
I
16M x 8
GS81302T07GE-333I
SigmaDDR-II+ B2 SRAM
RoHS-compliant 165-bump BGA
333
I
16M x 8
GS81302T07GE-300I
SigmaDDR-II+ B2 SRAM
RoHS-compliant 165-bump BGA
300
I
16M x 9
GS81302T110E-450
SigmaDDR-II+ B2 SRAM
165-bump BGA
400
C
16M x 9
GS81302T110E-400
SigmaDDR-II+ B2 SRAM
165-bump BGA
400
C
16M x 9
GS81302T10E-350
SigmaDDR-II+ B2 SRAM
165-bump BGA
350
C
16M x 9
GS81302T10E-333
SigmaDDR-II+ B2 SRAM
165-bump BGA
333
C
16M x 9
GS81302T10E-300
SigmaDDR-II+ B2 SRAM
165-bump BGA
300
C
16M x 9
GS81302T10E-450I
SigmaDDR-II+ B2 SRAM
165-bump BGA
400
I
16M x 9
GS81302T10E-400I
SigmaDDR-II+ B2 SRAM
165-bump BGA
400
I
16M x 9
GS81302T10E-350I
SigmaDDR-II+ B2 SRAM
165-bump BGA
350
I
16M x 9
GS81302T10E-333I
SigmaDDR-II+ B2 SRAM
165-bump BGA
333
I
16M x 9
GS81302T10E-300I
SigmaDDR-II+ B2 SRAM
165-bump BGA
300
I
16M x 9
GS81302T10GE-450
SigmaDDR-II+ B2 SRAM
RoHS-compliant 165-bump BGA
400
C
16M x 9
GS81302T10GE-400
SigmaDDR-II+ B2 SRAM
RoHS-compliant 165-bump BGA
400
C
Notes:
1. For Tape and Reel add the character “T” to the end of the part number. Example: GS81302TxxE-300T.
2. C = Commercial Temperature Range. I = Industrial Temperature Range.
相關(guān)PDF資料
PDF描述
GS81302T110E-450T 16M X 9 DDR SRAM, 0.37 ns, PBGA165
GS816136CGD-250T 512K X 36 CACHE SRAM, 5.5 ns, PBGA165
GS8161EV32BD-200 512K X 32 CACHE SRAM, 6.5 ns, PBGA165
GS8161Z18DGD-200IVT 1M X 18 ZBT SRAM, 6.5 ns, PBGA165
GS8161Z18DT-250IV 1M X 18 ZBT SRAM, 5.5 ns, PQFP100
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
GS81302T36GE-333 制造商:GSI Technology 功能描述:SRAM SYNC SGL 1.8V 144MBIT 4MX36 0.45NS 165FPBGA - Trays
GS81302T36GE-333I 制造商:GSI Technology 功能描述:SRAM SYNC SGL 1.8V 144MBIT 4MX36 0.45NS 165FPBGA - Trays
GS815018AB 制造商:GSI 制造商全稱:GSI Technology 功能描述:1M x 18, 512K x 36 18Mb Register-Register Late Write SRAM
GS815018AB-250 制造商:GSI Technology 功能描述:SRAM SYNC DUAL 2.5V 18MBIT 1MX18 2NS 119FPBGA - Trays
GS815018AB-250I 制造商:GSI Technology 功能描述:SRAM SYNC DUAL 2.5V 18MBIT 1MX18 2NS 119FPBGA - Trays
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