參數(shù)資料
型號: GS8128418B-167IV
廠商: GSI TECHNOLOGY
元件分類: SRAM
英文描述: 8M X 18 CACHE SRAM, 8 ns, PBGA119
封裝: 14 X 22 MM, 1.27 MM PITCH, FPBGA-119
文件頁數(shù): 6/30頁
文件大小: 652K
代理商: GS8128418B-167IV
GS8128418/36B-xxxV
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
Rev: 1.02 7/2010
14/30
2007, GSI Technology
Operating Currents
Parameter
Test Conditions
Mode
Symbol
-200
-167
Unit
0
to 70°C
–40
to 85°C
0
to 70°C
–40
to 85°C
Operating
Current
Device Selected;
All other inputs
≥VIH or ≤ VIL
(x36)
Pipeline
IDD
IDDQ
440
40
475
40
395
35
430
35
mA
Flow Through
IDD
IDDQ
350
20
385
20
340
20
375
20
mA
(x18)
Pipeline
IDD
IDDQ
400
20
435
20
365
20
400
20
mA
Flow Through
IDD
IDDQ
325
15
360
15
315
15
350
15
mA
Standby
Current
ZZ
≥ VDD – 0.2 V
Pipeline
ISB
200
240
200
240
mA
Flow Through
ISB
200
240
200
240
mA
Deselect
Current
Device Deselected;
All other inputs
≥ VIH or ≤ VIL
Pipeline
IDD
260
300
250
280
mA
Flow Through
IDD
240
270
240
270
mA
Notes:
1. IDD and IDDQ apply to any combination of VDD and VDDQ operation.
2. All parameters listed are worst case scenario.
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GS81302D08E-333 16M X 8 DDR SRAM, 0.45 ns, PBGA165
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
GS8128418B-167V 制造商:GSI Technology 功能描述:SRAM SYNC DUAL 1.8V/2.5V 144MBIT 8MX18 8NS/3.4NS 119FPBGA - Trays
GS8128418B-200 制造商:GSI Technology 功能描述:SRAM SYNC DUAL 2.5V/3.3V 144MBIT 8MX18 7.5NS/3NS 119FPBGA - Trays
GS8128418B-200I 制造商:GSI Technology 功能描述:SRAM SYNC DUAL 2.5V/3.3V 144MBIT 8MX18 7.5NS/3NS 119FPBGA - Trays
GS8128418B-200IV 制造商:GSI Technology 功能描述:8M X 18 (144 MEG) - Trays
GS8128418B-200V 制造商:GSI Technology 功能描述:SRAM SYNC DUAL 1.8V/2.5V 144MBIT 8MX18 7.5NS/3NS 119FPBGA - Trays