參數(shù)資料
型號(hào): GLT5640L32-5.5
廠商: Electronic Theatre Controls, Inc.
英文描述: CMOS Synchronous DRAM 2M x 32 SDRAM
中文描述: 200萬(wàn)的CMOS同步DRAM × 32內(nèi)存
文件頁(yè)數(shù): 1/72頁(yè)
文件大?。?/td> 2315K
代理商: GLT5640L32-5.5
G-LINK
GLT5640AL16
4M X 16 CMOS Synchronous Dynamic RAM
Feb 2004 (Rev.0.1)
G-Link Technology Corporation, Taiwan
Web : www.glink.com.tw Email : sales@glink.com.tw
TEL : 886-2-27968078
- 1 -
Description
The GLT5640AL16 are high-speed 67,108,864-bit synchronous dynamic random-access memories, organized as
1,048,576 x 16 x 4 (word x bit x bank), respectively.
The synchronous DRAMs achieved high-speed data transfer using the pipeline architecture and clock frequency up
to 183MHz. All input and outputs are synchronized with the positive edge of the clock. The synchronous DRAMs are
compatible with Low Voltage TTL (LVTTL).These products are packaged in 54-pin TSOPII.
Features
Single 3.3V ((
±
0.3V) power supply
High speed clock cycle time -5.5:183MHz<3-3-3>,-6:166MHz<3-3-3>, -7:143MHz<3-3-3>, -8: 125MHz<3-3-3>
-10 : 100MHz<3-3-3>
Fully synchronous operation referenced to clock rising edge
Possible to assert random column access in every cycle
Quad internal banks controlled by BA0 & BA1 (Bank Select)
Byte control by LDQM and UDQM
Programmable Wrap sequence (Sequential / Interleave)
Programmable burst length (1, 2, 4, 8 and full page)
Programmable /CAS latency (2 and 3)
Automatic precharge and controlled precharge
CBR (Auto) refresh and self refresh
X16 organization
LVTTL compatible inputs and outputs
4,096 refresh cycles / 64ms
Burst termination by Burst stop and Precharge command
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