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參數(shù)資料
| 型號(hào)： | FQS4410 |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | JFETs |
| 英文描述： | Single N-Channel, Logic Level, Power MOSFET |
| 中文描述： | 10 A, 30 V, 0.0135 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | SOP-8 |
| 文件頁(yè)數(shù)： | 1/8頁(yè) |
| 文件大?。?/td> | 598K |
| 代理商： | FQS4410 |
2000 Fairchild Semiconductor International
May 2000
Rev. A, May 2000
F
QFET
TM
FQS4410
Single N-Channel, Logic Level, Power MOSFET
General Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary,
planar stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for low voltage applications such as DC/DC
converters,
high
efficiency
management in portable and battery operated products.
switching
for
power
Features
10A, 30V, R
DS(on)
= 0.0135
@V
GS
= 10 V
Low gate charge ( typical 21 nC)
Low Crss ( typical 145 pF)
Fast switching
Improved dv/dt capability
175
°
C maximum junction temperature rating
Absolute Maximum Ratings
T
C
= 25°C unless otherwise noted
Thermal Characteristics
Symbol
V
DSS
I
D
Parameter
FQS4410
30
10
8
50
±
20
7.0
2.5
0.02
-55 to +175
Units
V
A
A
A
V
V/ns
W
W/°C
°C
Drain-Source Voltage
Drain Current
- Continuous (T
C
= 25°C)
- Continuous (T
C
= 70°C)
- Pulsed
I
DM
V
GSS
dv/dt
Drain Current
Gate-Source Voltage
Peak Diode Recovery dv/dt
Power Dissipation (T
C
= 25°C)
Linear Derating Factor
Operating and Storage Temperature Range
(Note 1)
(Note 3)
P
D
T
J
, T
STG
Symbol
R
θ
JA
Parameter
Typ
--
Max
50
Units
°C
/
W
Thermal Resistance, Junction-to-Ambient
1
2
3
4
5
6
7
8
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| FQS4410TF | 功能描述:MOSFET 30V N-Channel Power MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FQS4900 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:Dual N & P-Channel, Logic Level MOSFET |
| FQS4900TF | 功能描述:MOSFET N-Ch 60V/ P-Ch 300V Dual QFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FQS4900TF_Q | 功能描述:MOSFET N-Ch 60V/ P-Ch 300V Dual QFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FQS4901 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:400V Dual N-Channel MOSFET |
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