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參數(shù)資料
| 型號(hào)： | FQS4900 |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | JFETs |
| 英文描述： | Dual N & P-Channel, Logic Level MOSFET |
| 中文描述： | 1.3 A, 60 V, 0.65 ohm, 2 CHANNEL, N AND P-CHANNEL, Si, POWER, MOSFET |
| 封裝： | SOP-8 |
| 文件頁數(shù)： | 1/9頁 |
| 文件大?。?/td> | 1100K |
| 代理商： | FQS4900 |
2000 Fairchild Semiconductor International
August 2000
Rev. A, August 2000
F
QFET
TM
FQS4900
Dual N & P-Channel, Logic Level MOSFET
General Description
These dual N and P-channel enhancement mode power
field effect transistors are produced using Fairchild’s
proprietary, planar stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. This device is well
suited for high interface in telephone sets.
Features
N-Channel 1.3A, 60V, R
DS(on)
= 0.55
@ V
GS
= 10 V
R
DS(on)
= 0.65
@ V
GS
= 5 V
P-Channel -0.3A, -300V, R
DS(on)
= 15.5
@ V
GS
= -10 V
R
DS(on)
= 16
@ V
GS
=- 5 V
Low gate charge ( typical N-Channel 1.6 nC)
( typical P-Channel 3.6 nC)
Fast switching
Improved dv/dt capability
Absolute Maximum Ratings
T
A
= 25°C unless otherwise noted
Thermal Characteristics
Symbol
V
DSS
I
D
Parameter
N-Channel
60
1.3
0.82
5.2
P-Channel
-300
-0.3
-0.19
-1.2
Units
V
A
A
A
V
V/ns
W
W
°C
Drain-Source Voltage
Drain Current
- Continuous (T
A
= 25°C)
- Continuous (T
A
= 70°C)
- Pulsed
I
DM
V
GSS
dv/dt
P
D
Drain Curent
Gate-Source Voltage
Peak Diode Recovery dv/dt
Power Dissipation (T
A
= 25°C)
Operating and Storage Temperature Range
(Note 1)
±
20
(Note 2)
7.0
4.5
2.0
1.3
(T
A
= 70°C)
T
J
, T
STG
-55 to +150
Symbol
R
θ
JA
Parameter
Typ
--
Max
62.5
Units
°C
/
W
Thermal Resistance, Junction-to-Ambient
!
"
!
!
#
$
!
!
!
!
!
!
4
3
2
1
5
6
7
8
S1
G1
S2
G2
D1
D1
D2
D2
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| FQS4900TF | 功能描述:MOSFET N-Ch 60V/ P-Ch 300V Dual QFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FQS4900TF_Q | 功能描述:MOSFET N-Ch 60V/ P-Ch 300V Dual QFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FQS4901 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:400V Dual N-Channel MOSFET |
| FQS4901 | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET DUAL NN SO-8 |
| FQS4901TF | 功能描述:MOSFET 400V Dual N-Ch QFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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