- 您現(xiàn)在的位置：買(mǎi)賣(mài)IC網(wǎng) > PDF目錄371742 > FQI58N08 TRANSISTOR | MOSFET | N-CHANNEL | 80V V(BR)DSS | 57.5A I(D) | TO-262AA PDF資料下載
參數(shù)資料
| 型號(hào)： | FQI58N08 |
| 英文描述： | TRANSISTOR | MOSFET | N-CHANNEL | 80V V(BR)DSS | 57.5A I(D) | TO-262AA |
| 中文描述： | 晶體管| MOSFET的| N溝道| 80V的五（巴西）直| 57.5AI（四）|對(duì)262AA |
| 文件頁(yè)數(shù)： | 1/9頁(yè) |
| 文件大?。?/td> | 630K |
| 代理商： | FQI58N08 |
2000 Fairchild Semiconductor International
December 2000
Rev. A2, December 2000
F
QFET
TM
FQB58N08 / FQI58N08
80V N-Channel MOSFET
General Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary,
planar stripe, DMOS technology.
This advanced technology is especially tailored to minimize
on-state
resistance,
provide
performance, and withstand a high energy pulse in the
avalanche and commutation modes. These devices are
well suited for low voltage applications such as automotive,
high efficiency switching for DC/DC converters, and DC
motor control.
superior
switching
Features
57.5A, 80V, R
DS(on)
= 0.024
@V
GS
= 10 V
Low gate charge ( typical 50 nC)
Low Crss ( typical 120 pF)
Fast switching
100% avalanche tested
Improved dv/dt capability
175
°
C maximum junction temperature rating
! "
!
!
S
!
"
"
Absolute Maximum Ratings
T
C
= 25°C unless otherwise noted
Thermal Characteristics
Symbol
V
DSS
I
D
Parameter
FQB58N08 / FQI58N08
80
57.5
40.6
230
±
25
560
57.5
14.6
6.5
3.75
146
0.97
-55 to +175
Units
V
A
A
A
V
mJ
A
mJ
V/ns
W
W
W/°C
°C
Drain-Source Voltage
Drain Current
- Continuous (T
C
= 25°C)
- Continuous (T
C
= 100°C)
- Pulsed
I
DM
V
GSS
E
AS
I
AR
E
AR
dv/dt
P
D
Drain Current
Gate-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation (T
A
= 25°C) *
Power Dissipation (T
C
= 25°C)
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
- Derate above 25°C
T
J
, T
STG
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8
”
from case for 5 seconds
T
L
300
°C
Symbol
R
θ
JC
R
θ
JA
R
θ
JA
Parameter
Typ
--
--
--
Max
1.03
40
62.5
Units
°C
/
W
°C
/
W
°C
/
W
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient *
Thermal Resistance, Junction-to-Ambient
* When mounted on the minimum pad size recommended (PCB Mount)
D
G
D
2
-PAK
FQB Series
I
2
-PAK
FQI Series
G
S
D
G
S
D
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| FQB9N30 | TRANSISTOR | MOSFET | N-CHANNEL | 300V V(BR)DSS | 9A I(D) | TO-263AB |
| FQB9N30 | 300V N-Channel MOSFET(漏源電壓為300V的N溝道增強(qiáng)型MOSFET) |
| FQI9N30 | 300V N-Channel MOSFET(漏源電壓為300V的N溝道增強(qiáng)型MOSFET) |
| FQI22N30 | TRANSISTOR | MOSFET | N-CHANNEL | 300V V(BR)DSS | 21A I(D) | TO-263 |
| FQI22P10 | 100V P-Channel MOSFET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| FQI5N15 | 制造商:FAIRCHILD 制造商全稱(chēng):Fairchild Semiconductor 功能描述:150V N-Channel MOSFET |
| FQI5N15TU | 功能描述:MOSFET 150V N-Channel QFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FQI5N20 | 制造商:FAIRCHILD 制造商全稱(chēng):Fairchild Semiconductor 功能描述:200V N-Channel MOSFET |
| FQI5N20L | 制造商:FAIRCHILD 制造商全稱(chēng):Fairchild Semiconductor 功能描述:200V LOGIC N-Channel MOSFET |
| FQI5N20LTU | 功能描述:MOSFET 200V N-Ch QFET Logic Level RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。