參數(shù)資料
型號(hào)： FQB9N30
廠商： FAIRCHILD SEMICONDUCTOR CORP
元件分類(lèi)： JFETs
英文描述： 300V N-Channel MOSFET(漏源電壓為300V的N溝道增強(qiáng)型MOSFET)
中文描述： 9 A, 300 V, 0.45 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263
封裝： D2PAK-3
文件頁(yè)數(shù)： 1/9頁(yè)
文件大?。?/td> 644K
代理商： FQB9N30
2000 Fairchild Semiconductor International
May 2000
Rev. A, May 2000
F
QFET
TM
FQB9N30 / FQI9N30
300V N-Channel MOSFET
General Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary,
planar stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for high efficiency switching DC/DC converters,
switch mode power supply.
Features
9.0A, 300V, R
DS(on)
= 0.45
@V
GS
= 10 V
Low gate charge ( typical 17 nC)
Low Crss ( typical 16 pF)
Fast switching
100% avalanche tested
Improved dv/dt capability
! "
!
!
S
!
"
"
Absolute Maximum Ratings
T
C
= 25°C unless otherwise noted
Thermal Characteristics
Symbol
V
DSS
I
D
Parameter
FQB9N30 / FQI9N30
300
9.0
5.7
36
±
30
420
9.0
9.8
4.5
3.13
98
0.78
-55 to +150
Units
V
A
A
A
V
mJ
A
mJ
V/ns
W
W
W/°C
°C
Drain-Source Voltage
Drain Current
- Continuous (T
C
= 25°C)
- Continuous (T
C
= 100°C)
- Pulsed
I
DM
V
GSS
E
AS
I
AR
E
AR
dv/dt
P
D
Drain Current
Gate-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation (T
A
= 25°C) *
Power Dissipation (T
C
= 25°C)
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
- Derate above 25°C
T
J
, T
STG
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8
"
from case for 5 seconds
T
L
300
°C
Symbol
R
θ
JC
R
θ
JA
R
θ
JA
* When mounted on the minimum pad size recommended (PCB Mount)
Parameter
Typ
--
--
--
Max
1.28
40
62.5
Units
°C
/
W
°C
/
W
°C
/
W
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient *
Thermal Resistance, Junction-to-Ambient
D
G
D
2
-PAK
FQB Series
I
2
-PAK
FQI Series
G
S
D
G
S
D
相關(guān)PDF資料
PDF描述
FQI9N30 300V N-Channel MOSFET(漏源電壓為300V的N溝道增強(qiáng)型MOSFET)
FQI22N30 TRANSISTOR | MOSFET | N-CHANNEL | 300V V(BR)DSS | 21A I(D) | TO-263
FQI22P10 100V P-Channel MOSFET
FQB22N30 300V N-Channel MOSFET(漏源電壓為300V的N溝道增強(qiáng)型MOS場(chǎng)效應(yīng)管)
FQI22N30 300V N-Channel MOSFET(漏源電壓為300V的N溝道增強(qiáng)型MOS場(chǎng)效應(yīng)管)
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
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FQB9N50C 制造商:FAIRCHILD 制造商全稱(chēng):Fairchild Semiconductor 功能描述:500V N-Channel MOSFET
FQB9N50C_09 制造商:FAIRCHILD 制造商全稱(chēng):Fairchild Semiconductor 功能描述:500V N-Channel MOSFET
FQB9N50CF 制造商:FAIRCHILD 制造商全稱(chēng):Fairchild Semiconductor 功能描述:500V N-Channel MOSFET
FQB9N50CFTM 功能描述:MOSFET 500V N-CH MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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