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參數(shù)資料
| 型號(hào)： | FPD3000P100 |
| 英文描述： | 2W PACKAGED POWER PHEMT |
| 中文描述： | 2W的包裝的功率PHEMT器件 |
| 文件頁(yè)數(shù)： | 3/3頁(yè) |
| 文件大?。?/td> | 182K |
| 代理商： | FPD3000P100 |
FPD3000P100
2W
P
ACKAGED
P
OWER P
HEMT
Phone:
+1 408 850-5790
Fax:
+1 408 850-5766
http://
www.filtronic.co.uk/semis
Released:
6/27/05
Email:
sales@filcsi.com
APPLICATIONS NOTES & DESIGN DATA
Applications Notes are available from your local Filtronic Sales Representative or directly from the
factory. Complete design data, including S-parameters, noise data, and large-signal models are
available on the Filtronic web site.
RECOMMENDED BIASING GUIDELINES:
For most applications, a dual-bias circuit is required due to the amount of quiescent current drawn by
the FPD3000P100. The Source of the discrete pHEMT device is wire-bonded to the package flange,
and therefore self-biasing (using a bypassed Source resistor to set the Gate-Source voltage) is not
practical. A dual-bias circuit will require a regulated and filtered negative Gate supply as well as a
positive Drain supply. Typical Gate bias voltages will be about -0.4V. Active bias circuits can be
employed if the dissipation by a Drain current sense resistor is acceptable, and in these cases the bias
voltages must be sequenced so that the negative Gate voltage is established at its final value before
the Drain voltage is reached, to prevent device self-oscillation.
All information and specifications are subject to change without notice.
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